Datasheet > MT28FW01GABA1LJS-0AAT

MT28FW01GABA1LJS-0AAT

更新时间： 2024-03-03 10:08:27

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
78页	1008K
描述
Parallel NOR Flash Automotive Memory

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数据手册

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MT28FW01GABA1LJS-0AAT 数据手册

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1Gb: x16, 3V, MT28FW, Automotive Parallel NOR

Features

Parallel NOR Flash Automotive Memory

MT28FW01GABA1xPC-0AAT, MT28FW01GABA1xJS-0AAT

• BLANK CHECK operation to verify an erased block

• CYCLIC REDUNDANCY CHECK (CRC) operation to

verify a program pattern

• V_PP/WP# protection

Features

• Single-level cell (SLC) process technology

• Supply voltage

– V_CC= 2.7–3.6V (program, erase, read)

– V_CCQ= 1.65 - V_CC(I/O buffers)

• Asynchronous random/page read

– Page size: 16 words

– Page access: 20ns (V_CC= V_CCQ= 2.7-3.6V)

– Random access: 105ns (V_CC= V_CCQ= 2.7-3.6V)

– Protects first or last block regardless of block

protection settings

• Software protection

– Volatile protection

– Nonvolatile protection

– Password protection

– Random access: 110ns (V_CCQ= 1.65-V_CC

)

• Extended memory block

– 512-word block for permanent, secure identifica-

tion

– Programmed or locked at the factory or by the

customer

• Buffer program (512-word program buffer)

– 2.0 MB/s (TYP) when using full buffer program

– 2.5 MB/s (TYP) when using accelerated buffer

program (V_HH

)

• Word program: 25us per word (TYP)

• Block erase (128KB): 0.2s (TYP)

• Memory organization

– Uniform blocks: 128KB or 64KW each

– x16 data bus

• Program/erase suspend and resume capability

– Read from another block during a PROGRAM

SUSPEND operation

– Read or program another block during an ERASE

SUSPEND operation

• JESD47-compliant

– 100,000 (minimum) ERASE cycles per block

– Data retention: 20 years (TYP)

• Package

– 56-pin TSOP, 14mm x 20mm (JS)

– 64-ball LBGA, 13mm x 11mm (PC)

• RoHS-compliant, halogen-free packaging

• Automotive operating temperature

– Ambient: –40°C to 105°C

• Unlock bypass, block erase, chip erase, and write to

buffer capability

CCMTD-1725822587-3365

mt28fw_genB_1gb_auto.pdf - Rev. H 05/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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与MT28FW01GABA1LJS-0AAT相关器件

型号	品牌	获取价格	描述	数据表
MT28FW01GABA1LPC-0AAT	MICRON	获取价格	Parallel NOR Flash Automotive Memory
MT28FW02GBBA1HPC-0AAT	MICRON	获取价格	MT28FW02GBBA1HPC-0AAT, MT28FW02GBBA1LPC-0AAT
MT28FW02GBBA1LPC-0AAT	MICRON	获取价格	MT28FW02GBBA1HPC-0AAT, MT28FW02GBBA1LPC-0AAT
MT28FW512ABA1HJS-0AAT	MICRON	获取价格	Legacy NOR Flash
MT28FW512ABA1HPC-0AAT	MICRON	获取价格	Legacy NOR Flash
MT28FW512ABA1HPN-0AAT	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT28FW512ABA1LJS-0AAT	MICRON	获取价格	NOR Flash for Automotive
MT28FW512ABA1LPC-0AAT	MICRON	获取价格	NOR Flash for Automotive
MT28FW512ABA1LPN-0AAT	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT28GU01GAAA1EGC-0SIT	MICRON	获取价格	Data Sheet: Micron StrataFlash Embedded Memory: MT28GU (256Mb, 512Mb, 1Gb) IT

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