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MT28FW02GBBA1HPC-0AAT PDF预览

MT28FW02GBBA1HPC-0AAT

更新时间: 2024-09-28 17:00:39
品牌 Logo 应用领域
镁光 - MICRON PC
页数 文件大小 规格书
75页 974K
描述
MT28FW02GBBA1HPC-0AAT, MT28FW02GBBA1LPC-0AAT

MT28FW02GBBA1HPC-0AAT 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LBGA,Reach Compliance Code:compliant
Factory Lead Time:3 weeks风险等级:5.72
最长访问时间:105 nsJESD-30 代码:R-PBGA-B64
长度:13 mm内存密度:2147483648 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:64
字数:134217728 words字数代码:128000000
工作模式:ASYNCHRONOUS最高工作温度:105 °C
最低工作温度:-40 °C组织:128MX16
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
编程电压:3 V筛选级别:AEC-Q100
座面最大高度:1.4 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:11 mm
Base Number Matches:1

MT28FW02GBBA1HPC-0AAT 数据手册

 浏览型号MT28FW02GBBA1HPC-0AAT的Datasheet PDF文件第2页浏览型号MT28FW02GBBA1HPC-0AAT的Datasheet PDF文件第3页浏览型号MT28FW02GBBA1HPC-0AAT的Datasheet PDF文件第4页浏览型号MT28FW02GBBA1HPC-0AAT的Datasheet PDF文件第5页浏览型号MT28FW02GBBA1HPC-0AAT的Datasheet PDF文件第6页浏览型号MT28FW02GBBA1HPC-0AAT的Datasheet PDF文件第7页 
2Gb: x16, 3V, MT28FW, Automotive Parallel NOR  
Features  
Parallel NOR Flash Automotive Memory  
MT28FW02GBBA1HPC-0AAT, MT28FW02GBBA1LPC-0AAT  
• BLANK CHECK operation to verify an erased block  
• CYCLIC REDUNDANCY CHECK (CRC) operation to  
Features  
• 2Gb stacked device (Two 1Gb die)  
• Single-level cell (SLC) process technology  
• Supply voltage  
– VCC = 2.7–3.6V (program, erase, read)  
– VCCQ = 1.65–VCC (I/O buffers)  
• Asynchronous random/page read  
– Page size: 16 words  
– Page access: 20ns (VCC = VCCQ = 2.7–3.6V)  
– Random access: 105ns (VCC = VCCQ = 2.7–3.6V)  
verify a program pattern  
• VPP/WP# protection  
– Protects first or last block regardless of block  
protection settings  
• Software protection  
– Volatile protection  
– Nonvolatile protection  
– Password protection  
• Extended memory block  
– 512-word block for permanent, secure identifica-  
tion  
– Programmed or locked at the factory or by the  
customer  
– Random access: 110ns (VCCQ = 1.65–VCC  
)
• Buffer program (512-word program buffer)  
– 2.0 MB/s (TYP) when using full buffer program  
– 2.5 MB/s (TYP) when using accelerated buffer  
program (VHH  
)
• JESD47-compliant  
• Word program: 25µs per word (TYP)  
• Block erase (128KB): 0.2s (TYP)  
• Memory organization  
– Uniform blocks: 128KB or 64KW each  
– x16 data bus  
• Program/erase suspend and resume capability  
– Read from another block during a PROGRAM  
SUSPEND operation  
– 100,000 (minimum) ERASE cycles per block  
– Data retention: 20 years (TYP)  
• Package  
– 64-ball LBGA, 11mm x 13mm (PC)  
• RoHS-compliant, halogen-free packaging  
• Automotive operating temperature  
– Ambient: –40°C to 105°C  
– Read or program another block during an ERASE  
SUSPEND operation  
• Unlock bypass, block erase, die erase, and write to  
buffer capability  
CCMTD-1718347970-10367  
mt28fw_2gb_automotive.pdf - Rev. F 10/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 2016 Micron Technology, Inc. All rights reserved.  
1
Products and specifications discussed herein are subject to change by Micron without notice.  

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