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MT28GU01GAAA2EGC-0SIT

更新时间： 2024-03-03 10:09:32
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镁光 - MICRON /
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121页 1435K
描述
Data Sheet: Micron StrataFlash Embedded Memory: MT28GU (256Mb, 512Mb, 1Gb) IT

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MT28GU01GAAA2EGC-0SIT 数据手册

 浏览型号MT28GU01GAAA2EGC-0SIT的Datasheet PDF文件第2页浏览型号MT28GU01GAAA2EGC-0SIT的Datasheet PDF文件第3页浏览型号MT28GU01GAAA2EGC-0SIT的Datasheet PDF文件第4页浏览型号MT28GU01GAAA2EGC-0SIT的Datasheet PDF文件第5页浏览型号MT28GU01GAAA2EGC-0SIT的Datasheet PDF文件第6页浏览型号MT28GU01GAAA2EGC-0SIT的Datasheet PDF文件第7页 
256Mb, 512Mb, 1Gb StrataFlash Memory  
Features  
Micron StrataFlash Embedded Memory  
MT28GU256AAA1EGC-0SIT, MT28GU256AAA2EGC-0SIT  
MT28GU512AAA1EGC-0SIT, MT28GU512AAA2EGC-0SIT,  
MT28GU01GAAA1EGC-0SIT, MT28GU01GAAA2EGC-0SIT  
• Power  
– Core voltage: 1.7– 2.0V  
– I/O voltage: 1.7–2.0V  
– Standby current: 60μA (TYP) for 512Mb, 65nm  
– Automatic power savings mode  
– 16-word synchronous-burst read current: 23mA  
(TYP) @ 108 MHz; 24mA (TYP) @ 133 MHz  
• Software  
Features  
• High-performance read, program, and erase  
– 96ns initial read access  
– 108 MHz with zero wait-state synchronous burst  
reads: 7ns clock-to-data output  
– 133 MHz with zero wait-state synchronous burst  
reads: 5.5ns clock-to-data output  
– 8-, 16-, and continuous-word synchronous-burst  
reads  
– Programmable WAIT configuration  
– Customer-configurable output driver impedance  
– Buffered Programming: 2.0 μs/Word (TYP),  
512Mb, 65nm  
– Block erase: 0.9s per block (TYP)  
– 20μs (TYP) program/erase suspend  
• Architecture  
– 16-bit wide data bus  
– Multilevel cell technology  
– Micron® Flash data integrator (FDI) optimized  
– Basic command set (BCS) and extended com-  
mand set (ECS) compatible  
– Common Flash interface (CFI) capable  
• Security  
– One-time programmable (OTP) space  
64 unique factory device identifier bits  
2112 user-programmable OTP bits  
– Absolute write protection: VPP = GND  
– Power-transition erase/program lockout  
– Individual zero latency block locking  
– Individual block lock-down  
– Symmetrically-blocked array architecture  
– 256KB erase blocks  
• Density and packaging  
– 1Gb device: Eight 128Mb partitions  
– 512Mb device: Eight 64Mb partitions  
– 256Mb device: Eight 32Mb partitions  
– READ-While-PROGRAM and READ-While-  
ERASE commands  
– 256Mb, 512Mb, and 1Gb  
– Address-data multiplexed and non-multiplexed  
interfaces  
– 64-Ball Easy BGA  
– Status register for partition/device status  
– Blank check feature  
• Temperature Range  
– Expanded temperature: –40°C to +85°C  
• JESD47H-compliant  
– Minimum 100,000 ERASE cycles per block  
– Data retention: 20 years (TYP)  
PDF: 09005aef8448483a  
256-512mb_1gb_65nm_g18_it.pdf - Rev. I 05/15 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2011 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  
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MT28GU01GAAA2EGC-0SIT 替代型号

型号 品牌 替代类型 描述 数据表
MT28GU01GAAA1EGC-0SIT MICRON

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