Datasheet > MT28F322D18FH-805BET

MT28F322D18FH-805BET

更新时间： 2024-02-15 21:23:00

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
44页	519K
描述
FLASH MEMORY

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数据手册

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2 MEG x 16

ASYNC/PAGE/BURST FLASH MEMORY

MT28F322D20

MT28F322D18

FLASH MEMORY

Low Voltage, Extended Temperature

0.18µm Process Technology

FEATURES

• Flexible dual-bank architecture

– Support for true concurrent operation with zero

latency

BALL ASSIGNMENT

58-Ball FBGA

– Read bank a during program bank b and vice versa

– Read bank a during erase bank b and vice versa

• Basic configuration:

Seventy-one erasable blocks

– Bank a (8Mb for data storage)

– Bank b (24Mb for program storage)

• V^CC, VCCQ, VPP voltages

A11

A18

A12

A13

A15

A20

CLK

ADV#

A16

RST#

WE#

DQ12

DQ2

A17

A19

WP#

DQ1

DQ9

A10

– 1.70V (MIN), 1.90V (MAX) V^CC, VCCQ

(MT28F322D18 only)

WAIT#

DQ6

A14

– 1.80V VCC, VCCQ (MIN); 2.20V VCC (MAX)and 2.25V

V^CCQ (MAX) (MT28F322D20 only)

– 0.9V (TYP) VPP (in-system PROGRAM/ERASE)

– 12V 5ꢀ (ꢁV) VPP tolerant (factory programming

compatibility)

CCQ

DQ15

DQ14

CE#

DQ0

DQ8

DQ4

DQ13

DQ5

DQ10

DQ3

OE#

DQ11

DQ7

SSQ

VCCQ

VSSQ

VCC

• Random access time: 70ns/80ns @ 1.70V V^CC

• Burst Mode read access (MT28F322D20)

– MAX clock rate: 54 Mꢁz (^tCLK = 18.5ns)

– Burst latency: 70ns @ 1.80V VCC and 54 Mꢁz

– ^tACLK: 17ns @ 1.80V VCC and 54 Mꢁz

• Page Mode read access¹

Top View

(Ball Down)

NOTE: See page 7 for Ball Description Table.

– Eight-word page

See page 43 for mechanical drawing.

– Interpage read access: 70ns/80ns @ 1.80V

– Intrapage read access: 30ns @ 1.80V

• Low power consumption (V^CC= 2.20V)

– Asynchronous READ < 15mA (MAX)

– Standby < 50µA

– Automatic power saving feature (APS)

• Enhanced write and erase suspend options

– ERASE-SUSPEND-to-READ within same bank

– PROGRAM-SUSPEND-to-READ within same bank

– ERASE-SUSPEND-to-PROGRAM within same bank

• Dual 64-bit chip protection registers for security

purposes

OPTIONS

MARKING

• Timing

70ns access

80ns access

• Frequency

54 MHz

40 MHz

No burst operation

• Boot Block Configuration

Top

Bottom

• Package

58-ball FBGA (8 x 7 ball grid)

• Operating Temperature Range

Extended (-40ºC to +85ºC)

-70

-80

5²

None

• Cross-compatible command support

– Extended command set

– Common flash interface

• PROGRAM/ERASE cycle

– 100,000 WRITE/ERASE cycles per block

NOTE: 1. Data based on MT28F322D20 device.

2. A “5” in the part mark represents two different

frequencies: 54 Mꢁz (MT28F322D20) or 52 Mꢁz

(MT28F322D18)

Part Number Example:

MT28F322D20FH-804 BET

2 Meg x 16 Async/Page/Burst Flash Memory

MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

12 3 4 5 6 7...44

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与MT28F322D18FH-805BET相关器件

型号	品牌	获取价格	描述	数据表
MT28F322D18FH-805TET	MICRON	获取价格	FLASH MEMORY
MT28F322D18FH-80BET	MICRON	获取价格	FLASH MEMORY
MT28F322D18FH-80TET	MICRON	获取价格	FLASH MEMORY
MT28F322D20	MICRON	获取价格	FLASH MEMORY
MT28F322D20FH-704BET	MICRON	获取价格	FLASH MEMORY
MT28F322D20FH-704TET	MICRON	获取价格	FLASH MEMORY
MT28F322D20FH-705BET	MICRON	获取价格	FLASH MEMORY
MT28F322D20FH-705TET	MICRON	获取价格	FLASH MEMORY
MT28F322D20FH-70BET	MICRON	获取价格	FLASH MEMORY
MT28F322D20FH-70TET	MICRON	获取价格	FLASH MEMORY

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