Datasheet > MT28F004B3WG-8T

MT28F004B3WG-8T

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
30页	425K
描述
FLASH MEMORY

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MT28F004B3WG-8T 数据手册

4Mb

SMART 3 BOOT BLOCK FLASH MEMORY

MT28F004B3

FLASH MEMORY

MT28F400B3

3V Only, Dual Supply (Smart 3)

FEATURES

• Seven erase blocks:

40-Pin TSOP Type I 48-Pin TSOP Type I

16KB/8K-word boot block (protected)

Two 8KB/4K-word parameter blocks

Four main memory blocks

• Smart 3 technology (B3):

3.3V ±0.3V V^CC

3.3V ±0.3V VPP application programming

5V ±10% VPP application/production programming¹

• Compatible with 0.3µm Smart 3 device

• Advanced 0.18µm CMOS floating-gate process

• Address access time: 80ns

44-Pin SOP

• 100,000 ERASE cycles

• Industry-standard pinouts

• Inputs and outputs are fully TTL-compatible

• Automated write and erase algorithm

• Two-cycle WRITE/ERASE sequence

• Byte- or word-wide READ and WRITE

(MT28F400B3, 256K x 16/512K x 8)

• Byte-wide READ and WRITE only

(MT28F004B3, 512K x 8)

• TSOP and SOP packaging options

GENERAL DESCRIPTION

OPTIONS

• Timing

MARKING

The MT28F004B3 (x8) and MT28F400B3 (x16/x8)

are nonvolatile, electrically block-erasable (flash), pro-

grammable memory devices containing 4,194,304 bits

organized as 262,144 words (16 bits) or 524,288 bytes (8

bits). Writing or erasing the device is done with either a

3.3V or 5V V^PPvoltage, while all operations are performed

with a 3.3V V^CC. Due to process technology advances,

5V VPP is optimal for application and production pro-

gramming. These devices are fabricated with Micron’s

advanced 0.18µm CMOS floating-gate process.

The MT28F004B3 and MT28F400B3 are organized

into seven separately erasable blocks. To ensure that

critical firmware is protected from accidental erasure or

overwrite, the devices feature a hardware-protected

boot block. Writing or erasing the boot block requires

either applying a super-voltage to the RP# pin or driv-

ing WP# HIGH in addition to executing the normal write

or erase sequences. This block may be used to store

code implemented in low-level system recovery. The

remaining blocks vary in density and are written and

erased with no additional security measures.

80ns access

-8

• Configurations

512K x 8

MT28F004B3

MT28F400B3

256K x 16/512K x 8

• Boot Block Starting Word Address

Top (3FFFFh)

Bottom (00000h)

• Operating Temperature Range

Commercial (0ºC to +70ºC)

Extended (-40ºC to +85ºC)

None

• Packages

44-pin SOP (MT28F400B3)

48-pin TSOP Type I (MT28F400B3)

40-pin TSOP Type I (MT28F004B3)

NOTE:

1. This generation of devices does not support 12V VPP

compatibility production programming; however, 5V VPP

application production programming can be used with no

loss of performance.

Refer to Micron’s Web site (www.micron.com/flash)

for the latest data sheet.

Part Number Example:

MT28F400B3SG-8T

4MbSmart3BootBlockFlashMemory

F45_3.p65 – Rev. 3, Pub. 12/01

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

12 3 4 5 6 7...30

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