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MT28F004B5-1

更新时间： 2022-11-25 21:59:39
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
32页 594K
描述
FLASH MEMORY

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MT28F004B5-1 数据手册

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4Mb  
SMART 5 BOOT BLOCK FLASH MEMORY  
MT28F004B5  
MT28F400B5  
FLASH MEMORY  
5V Only, Dual Supply (Smart 5)  
0.18µm Process Technology  
FEATURES  
•
•
Seven erase blocks:  
40-Pin TSOP Type I  
48-Pin TSOP Type I  
16KB/8K-word boot block (protected)  
Two 8KB/4K-word parameter blocks  
Four main memory blocks  
Smart 5 technology (B5):  
5V 10% VCC  
5V 10% VPP application/production  
programming1  
Advanced 0.18µm CMOS floating-gate process  
Compatible with 0.3µm Smart 5 device  
Address access time: 80ns  
44-Pin SOP2  
•
•
•
•
•
•
•
•
•
100,000 ERASE cycles  
Industry-standard pinouts  
Inputs and outputs are fully TTL-compatible  
Automated write and erase algorithm  
Two-cycle WRITE/ERASE sequence  
Byte- or word-wide READ and WRITE  
(MT28F400B5, 256K x 16/512K x 8)  
Byte-wide READ and WRITE only  
(MT28F004B5, 512K x 8)  
GENERAL DESCRIPTION  
The MT28F004B5 (x8) and MT28F400B5 (x16, x8)  
are nonvolatile, electrically block-erasable (Flash),  
programmable, read-only memories containing  
4,194,304 bits organized as 262,144 words (16 bits) or  
524,288 bytes (8 bits). Writing or erasing the device is  
done with a 5V VPP voltage, while all operations are  
performed with a 5V VCC. Due to process technology  
advances, 5V VPP is optimal for application and pro-  
duction programming. These devices are fabricated  
with Micron’s advanced 0.18µm CMOS floating-gate  
process.  
•
•
TSOP and SOP packaging options  
OPTIONS  
•
MARKING  
Timing  
80ns access  
Configurations  
512K x 8  
256K x 16/512K x 8  
Boot Block Starting Word Address  
Top (3FFFFh)  
-8  
•
MT28F004B5  
MT28F400B5  
•
•
•
T
B
The MT28F004B5 and MT28F400B5 are organized  
into seven separately erasable blocks. To ensure that  
critical firmware is protected from accidental erasure  
or overwrite, the devices feature a hardware-protected  
boot block. Writing or erasing the boot block requires  
either applying a super-voltage to the RP# pin or driv-  
ing WP# HIGH in addition to executing the normal  
write or erase sequences. This block may be used to  
store code implemented in low-level system recovery.  
The remaining blocks vary in density and are written  
and erased with no additional security measures.  
Please refer to Micron’s Web site (www.micron.com/  
flash) for the latest data sheet.  
Bottom (00000h)  
Operating Temperature Range  
Commercial (0ºC to +70ºC)  
Extended (-40ºC to +85ºC)  
Packages  
None  
ET  
MT28F400B5  
Plastic 44-pin SOP (600 mil)  
Plastic 48-pin TSOP Type I  
MT28F004B5  
SG2  
WG  
Plastic 40-pin TSOP Type I  
VG  
Notes:  
1. This generation of devices does not support 12V VPP  
compatibility production programming; however, 5V  
VPP application production programming can be used  
with no loss of performance.  
2. Contact factory for availability.  
Part Number Example:  
MT28F400B5WG-8 T  
4Mb Smart 5 Boot Block Flash Memory  
MT28F004B5_3.fm - Rev. 3, Pub. 8/2002  
©2002, Micron Technology Inc.  
1
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.  
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