Datasheet > MSM548512L-XXGS-K

MSM548512L-XXGS-K

更新时间： 2024-09-14 10:45:19

品牌	Logo	应用领域
冲电气 - OKI		静态存储器
页数	文件大小	规格书
12页	162K
描述
524,288-Word X 8-Bit High-Speed PSRAM

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E2L0044-17-Y1

This version: Jan. 1998

Previous version: Dec. 1996

¡ Semiconductor

MSM548512L

¡ Semiconductor

MSM548512L

524,288-Word ¥ 8-Bit High-Speed PSRAM

DESCRIPTION

TheMSM548512LisfabricatedusingOKI’sCMOSsilicongateprocesstechnology. Thisprocess,

coupledwithsingle-transistermemorystoragecells,permitsmaximumcircuitdensity,minimum

chip size and high speed.

MSM548512L has Self-refresh mode in addition to Address-refresh mode and Auto-refresh

mode. In the Self-refresh mode the internal refresh timer and address counter refresh the

dynamic memory cells automatically. This series allows low power consumption when using

standby mode with Self-refresh.

The MSM548512L also features a static RAM-like write function that writes the data into the

memory cell at the rising edge of WE.

FEATURES

• Large capacity

• Fast access time

• Low power

4-Mbit (524,288-word ¥ 8 bits)

80 ns max.

200 µA max. (standby with Self-refresh)

Self refresh

SRAM WE pin, no address multiplex

5 V ±10%

2048 cycle/32 ms auto-address refresh

SRAM standard package

• Refresh free

• Logic compatible

• Single power supply

• Refresh

• Package compatible

• Package options:

32-pin 600 mil plastic DIP

32-pin 525 mil plastic SOP

(DIP32-P-600-2.54)

(SOP32-P-525-1.27-K) (Product : MSM548512L-xxGS-K)

xx indicates speed rank.

(Product : MSM548512L-xxRS)

PRODUCT FAMILY

Access Time (Max.)

Family

MSM548512L-80RS

MSM548512L-10RS

MSM548512L-12RS

MSM548512L-80GS-K

MSM548512L-10GS-K

MSM548512L-12GS-K

Package

80 ns

100 ns

120 ns

80 ns

600 mil 32-pin

Plastic DIP

525 mil 32-pin

Plastic SOP

100 ns

120 ns

1/12

12 3 4 5 6 7...12

中文翻译

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