MSC82304

更新时间： 2024-11-29 22:51:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体放大器晶体管射频微波
页数	文件大小	规格书
4页	56K
描述
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

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MSC82304 数据手册

MSC82304

RF & MICROWAVE TRANSISTORS

GENERAL PURPOSE AMPLIFIER APPLICATIONS

PRELIMINARY DATA

REFRACTORY/GOLD METALLIZATION

VSWR CAPABILITY 20:1 @ RATED

CONDITIONS

HERMETIC STRIPAC PACKAGE

P_OUT

3.8 W MIN. WITH 10.0 dB GAIN

.250 2LFL (S010)

hermeticaly sealed

ORDER CODE

MSC82304

BRANDING

82304

PIN CONNECTION

DESCRIPTION

The MSC82304 is a common base hermetically

sealed silicon NPN microwave power transistor

utilizing a rugged overlay die geometry. This device

is capable of withstanding 20:1 load VSWR at

any phase angle under rated conditions.

The MSC82304 was designed for Class C Am-

plifier/Oscillator applications in the 1.5 - 2.3 GHz

frequency range.

1. Collector

2. Base

3. Emitter

4. Base

= 25 C)

ABSOLUTE MAXIMUM RATINGS (T

case

Symbol

P_DISS

I_C

Parameter

Value

11.5

600

Unit

Power Dissipation*

Device Current*

(T_C≤ 50°C)

V_CC

T_J

Collector-Supply Voltage*

Junction Temperature

Storage Temperature

200

T_STG

− 65 to +200

THERMAL DATA

C/W

R_TH(j-c)

Junction-Case Thermal Resistance*

*Applies only to rated RF amplifier operation

1/4

October 1992

12 3 4

中文翻译

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