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MSC82040 PDF预览

MSC82040

更新时间: 2024-11-28 22:51:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管射频微波
页数 文件大小 规格书
6页 139K
描述
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

MSC82040 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-CRPM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
外壳连接:BASE最大集电极电流 (IC):0.2 A
基于收集器的最大容量:3.2 pF集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):15
最高频带:L BANDJESD-30 代码:O-CRPM-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1600 MHzBase Number Matches:1

MSC82040 数据手册

 浏览型号MSC82040的Datasheet PDF文件第2页浏览型号MSC82040的Datasheet PDF文件第3页浏览型号MSC82040的Datasheet PDF文件第4页浏览型号MSC82040的Datasheet PDF文件第5页浏览型号MSC82040的Datasheet PDF文件第6页 
MSC82040  
RF & MICROWAVE TRANSISTORS  
GENERAL PURPOSE LINEAR APPLICATIONS  
.
.
.
.
EMITTER BALLASTED  
CLASS A LINEAR OPERATION  
COMMON EMITTER  
VSWR CAPABILITY :1 @ RATED  
CONDITIONS  
.
.
.
ft 1.6 GHz TYPICAL  
NOISE FIGURE 15.5 dB @ 2 GHz  
.230 4L STUD (S027)  
POUT  
27 dBm MIN. @ 1.0 GHz  
=
hermetically sealed  
ORDER CODE  
BRANDING  
82040  
MSC82040  
PIN CONNECTION  
DESCRIPTION  
The MSC82040 is a hermetically sealed NPN  
power transistor with a fishbone, emitter finger  
ballasted geometry utilizing a refractory/gold me-  
tallization system. The device is designed speci-  
fically for Class A linear applications to provide  
high gain and high output power at the 1.0 dB  
compression point.  
1. Collector  
2. Emitter  
3. Base  
4. Emitter  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
PDISS  
IC  
Parameter  
Value  
Unit  
W
Power Dissipation  
(see Safe Area)  
Device Bias Current  
200  
20  
mA  
V
VCE  
Collector-Emitter Bias Voltage*  
Junction Temperature  
°
°
TJ  
200  
C
C
TSTG  
Storage Temperature  
65 to +200  
THERMAL DATA  
°
C/W  
RTH(j-c)  
Junction-Case Thermal Resistance*  
20  
*Applies only to rated RF amplifier operation  
1/6  
October 1992  

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