生命周期: | Obsolete | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.84 | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 1.4 V | 最大非重复峰值正向电流: | 1400 A |
最高工作温度: | 150 °C | 最大输出电流: | 70 A |
最大重复峰值反向电压: | 1600 V | 子类别: | Rectifier Diodes |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MSAD70B-18 | ETC |
获取价格 |
Glass Passivated Rectifier Diode Modules | |
MSAD800-08 | ETC |
获取价格 |
Rectifier Diode Modules | |
MSAD800-12 | ETC |
获取价格 |
Rectifier Diode Modules | |
MSAD800-16 | ETC |
获取价格 |
Rectifier Diode Modules | |
MSAD800-18 | ETC |
获取价格 |
Rectifier Diode Modules | |
MSAEH50A05A | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 50V, 0.022ohm, 1-Element, N-Channel, Silicon, Met | |
MSAEH50A06A | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Met | |
MSAEI30N20A | MICROSEMI |
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RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor | |
MSAEI38N10A | MICROSEMI |
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RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor | |
MSAER05N100A | MICROSEMI |
获取价格 |
Small Signal Field-Effect Transistor |