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MS830 PDF预览

MS830

更新时间: 2024-11-03 22:29:51
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 90K
描述
8 Amp Schottky Barrier Rectifier 20 to 100 Volts

MS830 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-201AD包装说明:O-XALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.84其他特性:LOW NOISE
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-XALF-W2JESD-609代码:e0
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最大输出电流:8 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:30 V表面贴装:NO
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MS830 数据手册

 浏览型号MS830的Datasheet PDF文件第2页浏览型号MS830的Datasheet PDF文件第3页 
M C C  
MS820  
THRU  
MS8100  
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21201 Itasca Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
·
·
·
·
Low Switching Noise  
8 Amp Schottky  
Barrier Rectifier  
20 to 100 Volts  
Low Forward Voltage Drop  
High Current Capability  
High Surge Current Capability  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 30°C/W Junction To Lead  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
20V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
MS820  
MS830  
MS835  
MS840  
MS845  
MS860  
MS880  
MS820  
MS830  
MS835  
MS840  
MS845  
MS860  
MS880  
14V  
21V  
24.5V  
28V  
31.5V  
42V  
56V  
20V  
30V  
35V  
40V  
45V  
60V  
80V  
30V  
35V  
40V  
45V  
60V  
80V  
A
Cathode  
Mark  
B
D
MS8100  
MS8100  
100V  
70V  
100V  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
C
Average Forward  
Current  
IF(AV)  
8.0A  
TA = 120°C  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
Maximum  
DIMENSIONS  
Instantaneous  
Forward Voltage  
MS820-MS860  
MS880-MS8100  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
INCHES  
MIN  
---  
---  
.048  
1.000  
MM  
MIN  
---  
---  
1.20  
25.40  
DIM  
A
B
C
D
MAX  
.370  
.250  
.052  
---  
MAX  
9.50  
6.40  
1.30  
---  
NOTE  
VF  
IR  
.62V  
.85V  
IFM = 8.0A;  
TA = 25°C*  
1.0mA  
50mA  
TA = 25°C  
TA = 100oC  
Typical Junction  
Capacitance  
CJ  
550pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  

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