Datasheet > MS835-B

MS835-B

更新时间： 2024-11-04 18:31:39

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	128K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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MS835-B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.92	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

MS835-B 数据手册

M C C

MS820

THRU

MS8100

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

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Features

Low Switching Noise

8 Amp Schottky

Barrier Rectifier

20 to 100 Volts

Low Forward Voltage Drop

High Current Capability

High Surge Current Capability

Maximum Ratings

DO-201AD

Operating Temperature: -55°C to +125°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 30°C/W Junction To Lead

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

20V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

MS820

MS830

MS835

MS840

MS845

MS860

MS880

MS820

MS830

MS835

MS840

MS845

MS860

MS880

14V

21V

24.5V

28V

31.5V

42V

56V

20V

30V

35V

40V

45V

60V

80V

30V

35V

40V

45V

60V

80V

Cathode

Mark

MS8100

100V

70V

100V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

8.0A

T_A= 120°C

Peak Forward Surge

Current

I_FSM

200A

8.3ms, half sine

Maximum

DIMENSIONS

Instantaneous

Forward Voltage

MS820-MS860

MS880-MS8100

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

INCHES

MIN

.287

.189

.048

MIN

7.30

4.80

1.20

25.40

DIM

MAX

.374

.208

.052

---

MAX

9.50

5.30

1.30

---

NOTE

V_F

I_R

.62V

.85V

I_FM= 8.0A;

T_A= 25°C*

1.000

1.0mA

50mA

T_A= 25°C

T_A= 100^oC

Typical Junction

Capacitance

C_J

550pF

Measured at

1.0MHz, V_R=4.0V

*Pulse test: Pulse width 300 msec, Duty cycle 1%

www.mccsemi.com

Revision: 3

2003/04/30

12 3

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