Datasheet > MS8002

MS8002

更新时间： 2022-12-17 07:26:24

品牌	Logo	应用领域
美高森美 - MICROSEMI		肖特基二极管
页数	文件大小	规格书
3页	134K
描述
GaAs Schottky Diodes

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MS8002 数据手册

GaAs Schottky Diodes

MS8001 – MS8004

Packaged and Bondable Chips

Features

●

Low-Noise Performance

●

High Cut-off Frequency

●

Passivated to Enhance Reliability

●

Packaged Diodes and Bondable Chips

Applications

●

Single and Balanced Mixers and Detectors

●

Transceivers X, K and Ka Bands

Description

●

Microsemi’s MS8000 series of GaAs Schottky barrier

diodes are available in packaged form and bondable

chip configurations. These Schottky devices have low

series resistance and low junction capacitance. The

resulting low noise figure makes these diodes suitable

for sensitive mixer and detector applications from

below X band to beyond Ka band frequencies.

30 and 60 GHz Radios

●

Automotive Radar Detectors

Maximum Ratings

Incident Power

100 mW

Derate Linearly to

@ 25°C

at 175°C

Forward Current

15 mA

5 V

@ 25°C

Ordering Information

Reverse

Operating

Storage emperature

Voltage

Temperature

-55°C to +175°C

-55°C to +200°C

P00 is the designation for the bondable chip Schottky (e.g.

MS8001-P00). Packaged diodes are designated by the

package outline number (e.g. MS8001-30)

IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com

Specifications are subject to change. Consult factory for the latest information.

¹The MS8000 Series of products are

supplied with a RoHS complaint Gold finish

These devices are ESD sensitive and must be handled using ESD precautions.

Microsemi

Rev.: 2009-02-17

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

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