GaAs Schottky Diodes
®
TM
MS8001 – MS8004
Packaged and Bondable Chips
Features
●
Low-Noise Performance
●
High Cut-off Frequency
●
Passivated to Enhance Reliability
●
Packaged Diodes and Bondable Chips
Applications
●
Single and Balanced Mixers and Detectors
●
Transceivers X, K and Ka Bands
Description
●
Microsemi’s MS8000 series of GaAs Schottky barrier
diodes are available in packaged form and bondable
chip configurations. These Schottky devices have low
series resistance and low junction capacitance. The
resulting low noise figure makes these diodes suitable
for sensitive mixer and detector applications from
below X band to beyond Ka band frequencies.
30 and 60 GHz Radios
●
Automotive Radar Detectors
Maximum Ratings
Incident Power
100 mW
Derate Linearly to
@ 25°C
0
at 175°C
Forward Current
15 mA
5 V
@ 25°C
Ordering Information
Reverse
Operating
Storage emperature
Voltage
Temperature
-55°C to +175°C
-55°C to +200°C
P00 is the designation for the bondable chip Schottky (e.g.
MS8001-P00). Packaged diodes are designated by the
package outline number (e.g. MS8001-30)
T
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information.
1 The MS8000 Series of products are
supplied with a RoHS complaint Gold finish
.
These devices are ESD sensitive and must be handled using ESD precautions.
Microsemi
Copyright 2008
Rev.: 2009-02-17
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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