Datasheet > MS8050-L

MS8050-L

更新时间： 2022-02-26 12:37:08

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	283K
描述
NPN Silicon Plastic-Encapsulate Transistor

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MS8050-L 数据手册

M C C

MS8050-L

MS8050-H

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

SOT-23 Plastic-Encapsulate Transistors

Capable of 0.2Watts(Tamb=25^OC) of Power Dissipation.

NPN Silicon

Plastic-Encapsulate

Transistor

Collector-current 0.8A

Collector-base Voltage 40V

Operating and storage junction temperature range: -55^OC to +150^OC

Marking Code: Y11

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0 and MSL Rating 1

Halogen free available upon request by adding suffix "-HF"

SOT-23

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

Collector-Base Breakdown Voltage

6.0

---

Vdc

(I =100μAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I =1mAdc, I_B=0)

Emitter-Base Breakdown Voltage

---

Vdc

(I =100μAdc, I_C=0)

Collector Cutoff Current

0.1

μAdc

CBO

(V_CB=35Vdc, I =0)

Collector Cutoff Current

---

CEO

(V_CE=20Vdc, I =0)

DIMENSIONS

ON CHARACTERISTICS

INCHES

MIN

DIM

MAX

.120

.104

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

NOTE

h_FE(1)

DC Current Gain

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

(I =5mAdc, V_CE=1.0Vdc)

h_FE(2)

DCCurrent Gain

300

(I =100mAdc, V_CE=1.0Vdc)

h_FE(3)

DCCurrent Gain

---

(I =800mAdc, V_CE=1.0Vdc)

V_CE(sat)

V_BE(sat)

Collector-Emitter Saturation Voltage

0.5

1.2

Vdc

.085

.37

(I =800mAdc, I_B=80mAdc)

Base-Emitter Saturation Voltage

Suggested Solder

Pad Layout

(I =800mAdc, I_B=80mAdc)

.031

.800

SMALL-SIGNAL CHARACTERISTICS

.035

.900

f_T

Transistor Frequency

150

---

MHz

(I =20mAdc, V_CE=6.0Vdc, f=30MHz)

.079

2.000

inches

CLASSIFICATION OF HFE (2)

Rank

Range

80-200

200-300

.037

.950

.037

.950

www.mccsemi.com

1 of 3

Revision: B

2013/01/01

12 3

下载PDF

与MS8050-L相关器件

型号	品牌	描述	获取价格	数据表
MS8050-L_13	MCC	NPN Silicon Plastic-Encapsulate Transistor	获取价格
MS8050-L-TP-HF	MCC	Small Signal Bipolar Transistor, 0.8A I(C), NPN,	获取价格
MS808C06	FUJI	SCHOTTKY BARRIER DIODE	获取价格
MS80C154-12	TEMIC	CMOS 0 to 36 MHz Single Chip 8-bit Microcontroller	获取价格
MS80C154-16	TEMIC	CMOS 0 to 36 MHz Single Chip 8-bit Microcontroller	获取价格
MS80C154-20	TEMIC	CMOS 0 to 36 MHz Single Chip 8-bit Microcontroller	获取价格