M C C
MS8050-L
MS8050-H
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TM
Micro Commercial Components
Features
•
•
•
•
•
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SOT-23 Plastic-Encapsulate Transistors
Capable of 0.2Watts(Tamb=25OC) of Power Dissipation.
NPN Silicon
Plastic-Encapsulate
Transistor
Collector-current 0.8A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55OC to +150OC
Marking Code: Y11
Case Material: Molded Plastic. UL Flammability
x
Classification Rating 94V-0 and MSL Rating 1
Halogen free available upon request by adding suffix "-HF"
SOT-23
·
A
D
Electrical Characteristics @ 25OC Unless Otherwise Specified
C
Symbol
Parameter
Min
Max
Units
B
C
OFF CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage
40
25
6.0
---
---
---
Vdc
Vdc
E
B
(I =100μAdc, IE=0)
Collector-Emitter Breakdown Voltage
C
F
E
(I =1mAdc, IB=0)
C
Emitter-Base Breakdown Voltage
---
Vdc
(I =100μAdc, IC=0)
E
H
G
J
I
Collector Cutoff Current
0.1
0.1
μAdc
μAdc
CBO
(VCB=35Vdc, I =0)
E
K
I
Collector Cutoff Current
---
CEO
(VCE=20Vdc, I =0)
DIMENSIONS
MM
B
ON CHARACTERISTICS
INCHES
MIN
DIM
A
B
C
D
E
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
MAX
NOTE
hFE(1)
DC Current Gain
45
80
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
(I =5mAdc, VCE=1.0Vdc)
C
hFE(2)
DCCurrent Gain
300
(I =100mAdc, VCE=1.0Vdc)
C
hFE(3)
DCCurrent Gain
40
---
---
F
G
H
J
(I =800mAdc, VCE=1.0Vdc)
C
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
0.5
1.2
Vdc
Vdc
.085
.37
(I =800mAdc, IB=80mAdc)
C
K
Base-Emitter Saturation Voltage
Suggested Solder
Pad Layout
(I =800mAdc, IB=80mAdc)
C
.031
.800
SMALL-SIGNAL CHARACTERISTICS
.035
.900
fT
Transistor Frequency
150
---
MHz
(I =20mAdc, VCE=6.0Vdc, f=30MHz)
C
.079
2.000
inches
mm
CLASSIFICATION OF HFE (2)
Rank
L
H
Range
80-200
200-300
.037
.950
.037
.950
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Revision: B
2013/01/01