Datasheet > MS5N100FD

MS5N100FD

更新时间： 2024-11-15 18:09:19

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
7页	2652K
描述
DPAK

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中文翻译

获取价格

数据手册

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MS5N100FD 数据手册

MS5N100/S/FT/FE/FD

Planar Process N-channel 1000V MOS

Features



Extremely high dv/dt capability

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitances

Very good manufacturing

repeatibility

Applications



Switching application

Electrical ratings(Absolute maximum ratings)

Value

Unit

Parameter

Symbol

TO-220/

TO-252

1000

TO-3PH TO-220F

TO-263

Drain-source voltage（V_GS=0)

V_DS

V_GS

Gate-source voltage

±30

Avalanche current repetitive or

not-repetitive

IAR

(pulse width limited by Tj Max)

Single pulse avalanche energy

(starting Tj=25℃ Id=lar

Vdd=50V)

EAS

583

Drain current（continuous）at

TC=25℃

I_D

Drain current（continuous）at

TC=100℃

I_D

Drain current（pulsed）

Total dissipation at TC=25℃

Operating junction temperature

Storage temperature

I_DM

T_J

-55 to 175

300

℃

T_STG

Maximum lead temperature for

soldering purpose

℃

Electrical Characteristics(Tj=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ

Unit

H1.11

Maspower

12 3 4 5 6 7

中文翻译

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