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MS2213 PDF预览

MS2213

更新时间: 2024-11-13 22:29:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管射频微波电子航空
页数 文件大小 规格书
3页 155K
描述
RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS

MS2213 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:0.400 X 0.400 INCH, HERMETIC SEALED, M214, 2 PIN
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
其他特性:HIGH RELIABILITY外壳连接:BASE
最大集电极电流 (IC):3.5 A配置:SINGLE
最高频带:L BANDJESD-30 代码:S-CDFM-F2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

MS2213 数据手册

 浏览型号MS2213的Datasheet PDF文件第2页浏览型号MS2213的Datasheet PDF文件第3页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS2213  
RF & MICROWAVE TRANSISTORS  
SPECIALITY AVIONICS/JTIDS APPLICATIONS  
Features  
·
·
·
·
·
·
·
·
REFRACTORY/GOLD METALLIZATION  
EMITTER SITE BALLASTED  
15:1 VSWR CAPABILITY  
LOW RF THERMAL RESISTANCE  
INPUT/OUTPUT MATCHING  
OVERLAY GEOMETRY  
METAL/CERAMIC HERMETIC PACKAGE  
POUT = 30 W MIN. WITH 7.8 dB Gain  
DESCRIPTION:  
The MS2213 device is a high power Class C transistor specifically  
designed for JTIDS pulsed output and driver applications.  
The device is capable of operation over a wide range of pulse  
widths, duty cycles and temperatures and is capable of  
withstanding 15:1 output VSWR at rated RF conditions.  
Low RF thermal resistance and computerized automatic wire  
bonding techniques ensure high reliability and product  
consistency.  
The MS2213 is supplied in the hermetic metal/ceramic package  
with internal input matching structures.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
PDISS  
IC  
Parameter  
Value  
75  
3.5  
40  
Unit  
W
A
Power Dissipation *  
(TC £ 85°C)  
Device Current *  
VCC  
Collector - Supply Voltage *  
V
TJ  
TSTG  
Junction Temperature (Pulsed RF Operation)  
Storage Temperature  
250  
- 65 to + 200  
°C  
°C  
Thermal Data  
RTH(j-c)  
Junction-Case Thermal Resistance  
2.2  
°C/W  
* Applies only to rated RF amplifier operation  
MSC0920.PDF 9-23-98  

MS2213 替代型号

型号 品牌 替代类型 描述 数据表
MS2211 MICROSEMI

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