Datasheet > MS2216

MS2216

更新时间： 2024-11-15 21:15:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	177K
描述
Transistor

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技术参数
数据手册

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MS2216 技术参数

生命周期：	Obsolete	包装说明：	,
针数：	2	Reach Compliance Code：	compliant
风险等级：	5.84	Base Number Matches：	1

MS2216 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS2216

RF & MICROWAVE TRANSISTORS

L-BAND RADAR APPLICATIONS

FEATURES

1.2 – 1.4 GHz

28 VOLTS

P_OUT= 5.5 WATTS

GP = 10 dB MINIMUM

INPUT/OUTPUT MATCHING

COMMON BASE CONFIGURATION

DESCRIPTION:

The MS2216 is a NPN silicon bipolar transistor designed for

L-Band pulsed driver applications. This devices utilizes an

overlay die geometry to provide superior reliability under

a wide range of pulse widths and duty cycles. It is capable of

withstanding 5:1 load VSWR at rated RF conditions.

Automatic wirebonding and internal impedance matching

assures consistent broadband performance.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

P_DISS

I_C

Parameter

Value

16.7

0.8

Unit

Power Dissipation

Device Current

Vcc

Collector-Supply Voltage

Junction Temperature (RF Pulsed Operation)

Storage Temperature

250

°C

T_STG

-65 to +200

Thermal Data

R_TH(J-C)

Junction-case Thermal Resistance*

9.0

°C/W

* Applies only to rated RF operation

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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