Datasheet > MS2221

MS2221

更新时间： 2024-11-15 21:20:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网放大器晶体管
页数	文件大小	规格书
5页	150K
描述
Transistor

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技术参数
数据手册

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MS2221 技术参数

生命周期：	Obsolete	包装说明：	,
针数：	2	Reach Compliance Code：	compliant
风险等级：	5.84	Base Number Matches：	1

MS2221 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS2221

RF & MICROWAVE TRANSISTORS

L-BAND AVIONICS APPLICATIONS

Features

1235 - 1365 MHz

50 VOLTS

5:1 VSWR CAPABILITY

INPUT / OUTPUT MATCHING

P_OUT= 270 WATTS

G_P= 6.3 dB MINIMUM

COMMON BASE CONFIGURATION

DESCRIPTION:

The MS2221 is a high power transistor specifically designed

for L–Band radar pulsed output and driver applications.

This device is designed for operation under moderate pulse

width and duty cycle pulse conditions. Internal impedance

matching provides optimum performance across the entire

frequency band.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

P_DISS

I_C

Parameter

Power Dissipation* (T_C£ 100°C)*

Device Current*

Value

730

Unit

18.75

V_CC

Collector Supply Voltage*

T_J

Junction Temperature (RF Pulsed Operation)

Storage Temperature

250

°C

T_STG

-65 to +200

Thermal Data

R_TH(J-C)

Junction-case Thermal Resistance*

0.24

°C/W

*Applies only to rated RF amplifier operation

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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