Datasheet > MS2231

MS2231

更新时间： 2024-11-15 03:48:23

品牌	Logo	应用领域
ADPOW		晶体射频和微波晶体管
页数	文件大小	规格书
3页	102K
描述
RF AND MICROWAVE TRANSISTORS L-BAND APPLICATIONS

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数据手册

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MS2231 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS2231

RF AND MICROWAVE TRANSISTORS

L-BAND APPLICATIONS

Features

REFRACTORY/GOLD METALLIZATION

EMITTER SITE BALLASTED

LOW THERMAL RESISTANCE

INPUT / OUTPUT MATCHING

METAL/CERAMIC HERMETIC PACKAGE

P_OUT= 100 W MIN.

G_P= 6.0 dB GAIN

DESCRIPTION:

The MS2231 is a high-power Class C transistor specifically designed

for L-Band Radar pulsed driver applications.

This device is capable of operation over a wide range of pulse widths,

duty cycles, and termperatures and is capable of withstanding 3:1

output WSWR at rated RF conditions. Low RF thermal resistance and

computerized automatic wire bonding techniques ensure high

reliability and product consistency.

The MS2231 is supplied in the grounded IMPACÔ hermetic

metal/ceramic package with internal input/output matching structures.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

P_DISS

I_C

Parameter

Value

270

Unit

Power Dissipation*

Device Current*

(T_C£ 100°C)

13.5

V_CC

Collector-Supply Voltage*

T_J

Junction Temperature (Pulsed RF Operation)

Storage Temperature

250

°C

T_STG

– 65 to + 200

Thermal Data

R_TH(j-c)

Junction-Case Thermal Resistance*

0.55

°C/W

*Applies only to rated RF amplifier operation

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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