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MS2272 PDF预览

MS2272

更新时间: 2024-11-21 20:11:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网晶体管
页数 文件大小 规格书
4页 498K
描述
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, HERMETIC SEALED, M216, 4 PIN

MS2272 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
外壳连接:BASE最大集电极电流 (IC):24 A
配置:SINGLE最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F4JESD-609代码:e0
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

MS2272 数据手册

 浏览型号MS2272的Datasheet PDF文件第2页浏览型号MS2272的Datasheet PDF文件第3页浏览型号MS2272的Datasheet PDF文件第4页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS2272  
RF AND MICROWAVE TRANSISTORS  
AVIONICS APPLICATIONS  
Features  
255 MHz BANDWIDTH  
GOLD METALLIZATION  
EMITTER SITE BALLASTED  
POUT = 350W MINIMUM  
GP = 7.6 dB  
LOW THERMAL RESISTANCE  
INPUT/OUTPUT MATCHING  
15:1 VSWR CAPABILITY  
DESCRIPTION:  
The MS2272 avionics power transistor is a broadband, high peak  
pulse power device specifically designed for avionics  
applications requiring broad bandwidth with moderate duty cycle  
and pulse width constraints such as ground/ship DME/TACAN.  
The MS2272 is also designed for specialized applications where  
reduced power is provided under pulse formats utilizing short  
pulse widths and high burst or overall duty cycles. This device is  
capable of withstanding 15:1 VSWR mismatch load conditions at  
any phase angle under full rated conditions.  
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)  
Symbol  
PDISS  
IC  
Parameter  
Value  
940  
24  
Unit  
W
Power Dissipation*  
Device Current*  
A
VCC  
Collector-Supply Voltage*  
50  
TJ  
Junction Temperature (RF Pulsed Operation)  
Storage Temperature  
+200  
°C  
°C  
TSTG  
- 65 to + 200  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance*  
0.16  
°C/W  
*Applies only to rated RF amplifier operation  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

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