MS2215

更新时间： 2024-11-14 22:29:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管射频微波电子航空
页数	文件大小	规格书
3页	150K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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中文翻译

获取价格

数据手册
替代型号

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MS2215 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS2215

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

Features

REFRACTORY/GOLD METALLIZATION

EMITTER SITE BALLASTED

LOW THERMAL RESISTANCE

INPUT/OUTPUT MATCHING

OVERLAY GEOMETRY

METAL/CERAMIC HERMETIC PACKAGE

P_OUT= 150 W MIN. WITH 7.5 dB Gain

DESCRIPTION:

The MS2215 is designed for specialized avionics applications,

including Mode-S, TCAS and JTIDS where power is provided

under pulse formats utilizing short pulse widths and high burst or

overall duty cycles.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

P_DISS

I_C

Parameter

Value

300

16.5

Unit

Power Dissipation *

(T_C£

°C)

Device Current *

V_CC

Collector - Supply Voltage *

T_J

T_STG

Junction Temperature (Pulsed RF Operation)

Storage Temperature *

250

- 65 to + 200

°C

Thermal Data

R_TH(j-c)

Junction-Case Thermal Resistance *

0.57

°C/W

* Applies only to rated RF amplifier operation

MSC0921.PDF 9-23-98

12 3

中文翻译

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MS2215 替代型号

型号	品牌	替代类型	描述	数据表
MS2393	MICROSEMI	功能相似	RF & MICROWAVE TRANSISTORS

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