Datasheet > MS2214

MS2214

更新时间： 2024-11-15 03:48:23

品牌	Logo	应用领域
ADPOW		晶体晶体管射频微波电子航空
页数	文件大小	规格书
4页	210K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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数据手册

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MS2214 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS2214

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

Features

GOLD METALLIZATION

EMITTER SITE BALLASTED

Pout = 85 W MINIMUM

Gp = 7.5 dB

OVERLAY GEOMETRY

METAL/CERAMIC HERMETIC PACKAGE

LOW THERMAL RESISTANCE

DESCRIPTION:

The MS2214 is a silicon NPN bipolar transistor designed

for avionics applications with high duty cycle

requirements. Gold metallization and emitter ballasting

provides long term reliability under JTIDS and similar

pulse formats.

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C)

Symbol

V_CC

Parameter

Value

Unit

Collector-Supply Voltage*

I_C

Device Current*

8.0

P_DISS

T_J

T_STG

Power Dissipation*

Junction Temperature

Storage Temperature

300

+250

- 65 to + 200

°C

Thermal Data

R_TH(j-c)

Junction-Case Thermal Resistance*

0.75

°C/W

* Applies only to rated RF operation.

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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MS2215L3	CIT	获取价格	CIT SWITCH
MS2215L6	CIT	获取价格	CIT SWITCH
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MS2217	ADPOW	获取价格	RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.310 X 0.310 INCH, HERMETIC
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MS2219	CIT	获取价格	CIT SWITCH