Datasheet > MS160N03FDT

MS160N03FDT

更新时间： 2024-11-19 18:10:07

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
5页	2100K
描述
TO-220

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MS160N03FDT 数据手册

MS160N03FDT

Features



V_DS=30V,I_D=160A

R_DS(on)<2.1mΩ @ V_GS=10V

High density cell design for ultra low Rdson

Low gate charge



Improved dv/dt capability

RoHS product

Applications



Power switching application

Isolated DC/DC converters in Telecom and Industrial

Synchronous Rectification in DC/DC Converters

Absolute Ratings (Tc=25℃)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

I_D

±20

160

Drain Current-continuous

I_D(T_C=100℃)

128

640

277

(T_C=100℃)

Drain Current-pulse (note 1)

I_DM

Single Pulsed Avalanche Energy

(note 2)

E_AS

TC=25℃

Derate above

25℃

143

0.95

W/℃

℃

Maximum Power Dissipation

Operating and Storage

Temperature Range

T_J,T_STG

-55~+150

Electrical Characteristics(T_CASE=25℃ unless otherwise specified)

Parameter

Symbol Tests conditions Min Typ Max Units

Drain-Source Voltage

BV_DSS

I_DSS

I_D=250μA,V_GS=0V

V_DS=-60V,V_GS=0V

Zero Gate Voltage Drain

Current

μA

Gate-Body Leakage

Current

I_GSS

V_GS=±20V，V_DS=0V

±100 nA

H1.03

Maspower

12 3 4 5

中文翻译

下载PDF

与MS160N03FDT相关器件

型号	品牌	获取价格	描述	数据表
MS160N080FDT	MASPOWER	获取价格	TO-220
MS16100	MICROSEMI	获取价格	16 AMP SCHOTTKY RECTIFIER
MS161000FKX-10	MOSAIC	获取价格	SRAM Module, 2MX8, 100ns, CMOS
MS161000FKX-12	MOSAIC	获取价格	SRAM Module, 2MX8, 120ns, CMOS
MS161000FKX-70	MOSAIC	获取价格	SRAM Module, 2MX8, 70ns, CMOS
MS161000FKX-85	MOSAIC	获取价格	SRAM Module, 2MX8, 85ns, CMOS
MS161000FKXA-10	MOSAIC	获取价格	SRAM Module, 2MX8, 100ns, CMOS
MS161000FKXA-12	MOSAIC	获取价格	SRAM Module, 2MX8, 120ns, CMOS
MS161000FKXA-15	MOSAIC	获取价格	SRAM Module, 2MX8, 150ns, CMOS
MS161000FKXAI-10	MOSAIC	获取价格	SRAM Module, 2MX8, 100ns, CMOS