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MS160N080FDT PDF预览

MS160N080FDT

更新时间: 2024-11-19 18:09:11
品牌 Logo 应用领域
麦思浦 - MASPOWER /
页数 文件大小 规格书
7页 2273K
描述
TO-220

MS160N080FDT 数据手册

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MS160N080FDT  
Features  
VDS=80V,ID=160A,RDS(ON)<4.7mΩ@VGS=10V  
High density cell design for ultra low Rdson  
Fully characterized avalanche voltage and current  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
Special process technology for high ESD capability  
Applications  
Uninterruptible Power SupplyUPS)  
Automotive applications  
Hard switched and high frequency circuits  
Absolute Ratings (Tc=25)  
Parameter  
Symbol  
Value  
Unit  
Drain-Source Voltage  
VDSS  
80  
V
A
ID  
160  
Drain Current-continuous  
T=25  
T=100℃  
120  
A
Drain Current-pulse (note 1)  
Gate-Source Voltage  
IDM  
500  
±20  
A
V
VGSS  
Single pulse avalanche energy  
(note 5)  
EAS  
1936  
285  
1.9  
mJ  
W
PD  
TC=25℃  
Derate above  
25℃  
Power Dissipation  
W/℃  
Operating and Storage  
Temperature Range  
TJ,TSTG  
-55~+170  
Electrical Characteristics(TCASE=25unless otherwise specified)  
Parameter  
Symbol Tests conditions Min Typ Max Units  
Drain-Source Voltage  
BVDSS  
IDSS  
ID=250μA,VGS=0V  
80  
-
88  
-
-
V
Zero Gate Voltage Drain  
Current  
VDS=80V,VGS=0V,  
TC=25℃  
1
μA  
Gate body leakage  
current  
IGSS  
VDS=0V,VGS=±20V  
-
-
±100 nA  
On-Characteristics  
H1.01  
Maspower  
1

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