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MS1584 PDF预览

MS1584

更新时间: 2024-11-20 19:52:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网放大器晶体管
页数 文件大小 规格书
4页 134K
描述
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, M173, 4 PIN

MS1584 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-CDFM-F4
针数:4Reach Compliance Code:compliant
风险等级:5.13基于收集器的最大容量:70 pF
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F4
JESD-609代码:e0端子数量:4
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MS1584 数据手册

 浏览型号MS1584的Datasheet PDF文件第2页浏览型号MS1584的Datasheet PDF文件第3页浏览型号MS1584的Datasheet PDF文件第4页 
MS1584  
RF & MICROWAVE TRANSISTORS  
UHF TV/LINEAR APPLICATIONS  
Features  
470 - 860 MHz  
28 VOLTS  
P
OUT = 50 WATTS  
GP = 6.5 dB MINIMUM  
INTERNAL INPUT MATCHING  
CLASS A LINEAR OPERATION  
COMMON EMITTER CONFIGURATION  
DESCRIPTION:  
The MS1584 is a silicon NPN bipolar transistor specifically  
designed for high linearity applications such as UHF and  
TV Bands IV transmitters.  
Gold metallization and emitter ballasting assure high reliability  
under Class AB linear amplifier operation.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCBO  
Parameter  
Value  
45  
Unit  
V
Collector - Base Voltage  
VCEO  
VEBO  
IC  
PDISS  
TJ  
TSTG  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Device Currnet  
30  
V
3.0  
8
175  
+200  
V
A
W
°C  
°C  
Power Dissipation  
Junction Temperature  
Storage Temperature  
-65 to +150  
1.0  
Thermal Data  
RTH(J-C)  
°C/W  
Junction-case Thermal Resistance  
053-7104 Rev - 11-2002  

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