Datasheet > MS15N100HGB2

MS15N100HGB2

更新时间： 2024-11-19 18:09:35

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
6页	3251K
描述
TO-3PF

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中文翻译

获取价格

数据手册

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MS15N100HGB2 数据手册

MS15N100HGC0/T1

Features



V_DS=1000V,I_D=15A

Low Crss

Low gate charge

Improved dv/dt capability

Applications



High efficiency switch mode power supplies

Electronic lamp ballasts based on half bridge

UPS

Absolute Ratings (Tc=25℃)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

1000

±30

I_DTC=25℃

TC=100℃

Drain Current-continuous

Drain Current-pulse⁽¹⁾

I_DM

Single Pulsed Avalanche Energy

E_AS

950

(T_j=25℃,I_D=I_AR,V_DD=50V)

277

2.22

67.9

0.54

Maximum Power Dissipation

(TO-247)

W/℃

Maximum Power Dissipation

(TO-220F)

W/℃

Peak Diode Recovery voltage slope⁽²⁾

dv/dt

4.1

V/ns

Operating and Storage Temperature

Range

T_J,T_STG

-55~+175

℃

1. Pulse width Limited by safe operating arer

Electrical Characteristics(T_CASE=25℃ unless otherwise specified)

Parameter

Symbol Tests conditions Min Typ Max Units

Drain-Source Voltage

BV_DSS

I_D=250μA,V_GS=0V 1000

V_DS=V_DSS,V_GS=0V,

μA

Zero Gate Voltage Drain

Current

Tc=25℃

I_DSS

Tc=125℃

Gate-Body Leakage

Current

I_GSS

V_GS=±30V,V_DS=0V

±100 nA

H1.03

Maspower

12 3 4 5 6

中文翻译

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