生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, O-PRFM-F4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.56 |
其他特性: | HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS | 最大集电极电流 (IC): | 16 A |
集电极-发射极最大电压: | 35 V | 配置: | SINGLE |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | O-PRFM-F4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 200 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | RADIAL | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MS1076C | MICROSEMI |
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RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH | |
MS1076D | MICROSEMI |
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暂无描述 | |
MS1076E | MICROSEMI |
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RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH | |
MS1076F | MICROSEMI |
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RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH | |
MS1076G | MICROSEMI |
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RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH | |
MS1076H | MICROSEMI |
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RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH | |
MS1076I | MICROSEMI |
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RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH | |
MS1077 | MICROSEMI |
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RF & MICROWAVE TRANSISTORS | |
MS1078 | MICROSEMI |
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RF & MICROWAVE TRANSISTORS | |
MS1079 | ADPOW |
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RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |