Datasheet > MS1076B

MS1076B

更新时间： 2024-01-11 09:01:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网晶体管
页数	文件大小	规格书
6页	86K
描述
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4

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技术参数
数据手册

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MS1076B 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, O-PRFM-F4
针数：	4	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.56
其他特性：	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	最大集电极电流 (IC)：	16 A
集电极-发射极最大电压：	35 V	配置：	SINGLE
最高频带：	VERY HIGH FREQUENCY BAND	JESD-30 代码：	O-PRFM-F4
元件数量：	1	端子数量：	4
最高工作温度：	200 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	RADIAL	晶体管元件材料：	SILICON
Base Number Matches：	1

MS1076B 数据手册

MS1076

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

Features

•

30 MHz

28 VOLTS

GOLD METALLIZATION

P_OUT= 220 W PEP

G_P= 12 dB GAIN MINIMUM

COMMON EMITTER CONFIGURATION

DESCRIPTION:

The MS1076 is a 28 volt epitaxial NPN silicon planar transistor

designed primarily for SSB and VHF communications. This

device utilizes an emitter ballasted die geometry for maximum

ruggedness and reliability.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

V_CBO

V_CEO

V_EBO

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Device Current

4.0

P_DISS

T_J

Power Dissipation

250

+200

Junction Temperature

Storage Temperature

°C

T_STG

- 65 to +150

Thermal Data

R_TH(J-C)

Junction - Case Thermal Resistance

0.7

°C/W

Rev A: October 2009

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Visit our web site at www.microsemi.com or contact our factory direct.

12 3 4 5 6

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