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MS1080 PDF预览

MS1080

更新时间: 2024-11-27 19:33:47
品牌 Logo 应用领域
ADPOW 局域网晶体管
页数 文件大小 规格书
3页 65K
描述
RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN, PLASTIC, M174, 4 PIN

MS1080 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-PRFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84其他特性:WITH EMITTER BALLASTING RESISTORS
最大集电极电流 (IC):12 A基于收集器的最大容量:370 pF
集电极-发射极最大电压:55 V配置:SINGLE
最高频带:HIGH FREQUENCY BANDJESD-30 代码:O-PRFM-F4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管元件材料:SILICONBase Number Matches:1

MS1080 数据手册

 浏览型号MS1080的Datasheet PDF文件第2页浏览型号MS1080的Datasheet PDF文件第3页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS1080  
RF & MICROWAVE TRANSISTORS  
HF SSB APPLICATIONS  
Features  
·
·
·
·
·
·
30 MHz  
50 VOLTS  
GOLD METALLIZATION  
POUT = 220 W PEP  
GP = 13 dB GAIN MINIMUM  
COMMON EMITTER CONFIGURATION  
DESCRIPTION:  
The MS1080 is a 50 volt epitaxial NPN transistor designed  
primarily for SSB communication equipment. This device  
utilizes an emitter ballasted die geometry for maximum  
ruggedness under severe operating conditions.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCBO  
Parameter  
Value  
110  
Unit  
V
Collector - Base Voltage  
VCEO  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Device Current  
55  
V
VEBO  
IC  
4.0  
12  
V
A
PDISS  
TJ  
Power Dissipation  
300  
+200  
W
°C  
°C  
Junction Temperature  
Storage Temperature  
TSTG  
- 65 to +150  
Thermal Data  
RTH(J-C)  
Junction - Case Thermal Resistance  
0.55  
°C/W  
MSCXXXX.PDF 01-19-99  

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