Datasheet > MS1076F

MS1076F

更新时间： 2024-11-28 05:11:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
6页	86K
描述
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4

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MS1076F 数据手册

MS1076

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

Features

•

30 MHz

28 VOLTS

GOLD METALLIZATION

P_OUT= 220 W PEP

G_P= 12 dB GAIN MINIMUM

COMMON EMITTER CONFIGURATION

DESCRIPTION:

The MS1076 is a 28 volt epitaxial NPN silicon planar transistor

designed primarily for SSB and VHF communications. This

device utilizes an emitter ballasted die geometry for maximum

ruggedness and reliability.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

V_CBO

V_CEO

V_EBO

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Device Current

4.0

P_DISS

T_J

Power Dissipation

250

+200

Junction Temperature

Storage Temperature

°C

T_STG

- 65 to +150

Thermal Data

R_TH(J-C)

Junction - Case Thermal Resistance

0.7

°C/W

Rev A: October 2009

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Visit our web site at www.microsemi.com or contact our factory direct.

12 3 4 5 6

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