Datasheet > MRF6VP11KHR6_10

MRF6VP11KHR6_10

更新时间： 2024-11-12 12:21:59

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
11页	748K
描述
RF Power Field Effect Transistor

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MRF6VP11KHR6_10 数据手册

Document Number: MRF6VP11KH

Rev. 7, 4/2010

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed primarily for pulsed wideband applications with frequencies up to

150 MHz. Device is unmatched and is suitable for use in industrial, medical

and scientific applications.

MRF6VP11KHR6

•

Typical Pulsed Performance at 130 MHz: V_DD= 50 Volts, I_DQ= 150 mA,

_out= 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,

1.8--150 MHz, 1000 W, 50 V

LATERAL N--CHANNEL

BROADBAND

Duty Cycle = 20%

Power Gain — 26 dB

Drain Efficiency — 71%

RF POWER MOSFET

•

Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak

Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

CW Operation Capability with Adequate Cooling

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

Designed for Push--Pull Operation

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

CASE 375D--05, STYLE 1

NI--1230

•

RoHS Compliant

In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

PART IS PUSH--PULL

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

(Top View)

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +110

--6.0, +10

-- 65 to +150

150

Unit

Drain--Source Voltage

Vdc

°C

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

(1,2)

225

°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle

Case Temperature 67°C, 1000 W CW, 100 MHz

0.03

0.13

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF6VP11KHR6

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...11

中文翻译

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与MRF6VP11KHR6_10相关器件

型号	品牌	获取价格	描述	数据表
MRF6VP121KHR6	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6VP121KHSR5	NXP	获取价格	RF POWER, FET
MRF6VP121KHSR6	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6VP21KHR6	NXP	获取价格	VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN
MRF6VP21KHR6	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6VP21KHR6_10	FREESCALE	获取价格	RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF6VP2600H	FREESCALE	获取价格	RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF6VP2600HR6	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6VP2600HR6_10	FREESCALE	获取价格	RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
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