Datasheet > MRF6VP11KHR6

MRF6VP11KHR6

更新时间： 2024-11-12 04:11:35

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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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MRF6VP11KHR6 数据手册

Document Number: MRF6VP11KH

Rev. 0, 1/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed primarily for pulsed wideband applications with frequencies up to

150 MHz. Device is unmatched and is suitable for use in industrial, medical

and scientific applications.

MRF6VP11KHR6

• Typical Pulsed Performance at 130 MHz: V_DD= 50 Volts, I_DQ= 150 mA,

_out= 1000 Watts Peak, Pulse Width = 100 μsec, Duty Cycle = 20%

10-150 MHz, 1000 W, 50 V

LATERAL N-CHANNEL

BROADBAND

Power Gain — 26 dB

Drain Efficiency — 71%

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak

RF POWER MOSFET

Power

Features

• Qualified Up to a Maximum of 50 V_DDOperation

• Integrated ESD Protection

• Excellent Thermal Stability

• Designed for Push-Pull Operation

• Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

CASE 375D-05, STYLE 1

NI-1230

PART IS PUSH-PULL

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

(Top View)

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +110

-6.0, +10

- 65 to +150

150

Unit

Drain-Source Voltage

Vdc

°C

DSS

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

200

°C

Table 2. Thermal Characteristics

Characteristic

(1,2)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle

0.03

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6VP11KHR6

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...11

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与MRF6VP11KHR6相关器件

型号	品牌	获取价格	描述	数据表
MRF6VP11KHR6_09	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6VP11KHR6_10	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF6VP121KHR6	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6VP121KHSR5	NXP	获取价格	RF POWER, FET
MRF6VP121KHSR6	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6VP21KHR6	NXP	获取价格	VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN
MRF6VP21KHR6	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6VP21KHR6_10	FREESCALE	获取价格	RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF6VP2600H	FREESCALE	获取价格	RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF6VP2600HR6	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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