Datasheet > MRF6VP11KGSR5

MRF6VP11KGSR5

更新时间： 2024-11-17 12:49:15

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飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
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描述
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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MRF6VP11KGSR5 数据手册

Document Number: MRF6VP11KH

Rev. 8, 9/2012

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF6VP11KHR6

MRF6VP11KGSR5

Designed primarily for pulse wideband applications with frequencies up to

150 MHz. Devices are unmatched and are suitable for use in industrial,

medical and scientific applications.

•

Typical Pulse Performance at 130 MHz: V_DD= 50 Volts, I_DQ= 150 mA,

_out= 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,

1.8--150 MHz, 1000 W, 50 V

LATERAL N--CHANNEL

BROADBAND

Duty Cycle = 20%

Power Gain — 26 dB

Drain Efficiency — 71%

RF POWER MOSFETs

•

Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak

Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

CW Operation Capability with Adequate Cooling

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

Designed for Push--Pull Operation

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

CASE 375D--05

STYLE 1

NI--1230--4

MRF6VP11KHR6

•

In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel.

CASE 2282--02

NI--1230S--4 GULL

MRF6VP11KGSR5

PARTS ARE PUSH--PULL

RF /V

outA DSA

inA GSA

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +110

--6.0, +10

-- 65 to +150

150

Unit

Vdc

°C

RF /V

inB GSB

RF /V

outB DSB

Drain--Source Voltage

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

(Top View)

°C

Figure 1. Pin Connections

(1,2)

225

°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.13

°C/W

CW: Case Temperature 67°C, 1000 W CW, 100 MHz

Thermal Impedance, Junction to Case

0.03

°C/W

Pulse: Case Temperature 80°C, 1000 W Peak, 100 μsec Pulse Width, 20% Duty Cycle

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF6VP11KHR6 MRF6VP11KGSR5

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...13

中文翻译

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与MRF6VP11KGSR5相关器件

型号	品牌	获取价格	描述	数据表
MRF6VP11KHR5	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6VP11KHR6	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6VP11KHR6_09	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6VP11KHR6_10	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF6VP121KHR6	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6VP121KHSR5	NXP	获取价格	RF POWER, FET
MRF6VP121KHSR6	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6VP21KHR6	NXP	获取价格	VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN
MRF6VP21KHR6	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6VP21KHR6_10	FREESCALE	获取价格	RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

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