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MPSW51AG PDF预览

MPSW51AG

更新时间: 2024-11-09 10:48:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
5页 92K
描述
One Watt High Current Transistors

MPSW51AG 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.47Is Samacsys:N
最大集电极电流 (IC):1 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-226JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

MPSW51AG 数据手册

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MPSW51, MPSW51A  
One Watt High Current  
Transistors  
PNP Silicon  
Features  
http://onsemi.com  
PbFree Packages are Available*  
COLLECTOR  
3
2
MAXIMUM RATINGS  
BASE  
Rating  
Symbol  
Value  
Unit  
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
1
MPSW51  
30  
40  
EMITTER  
MPSW51A  
CollectorBase Voltage  
Vdc  
MPSW51  
MPSW51A  
40  
50  
EmitterBase Voltage  
5.0  
Vdc  
Collector Current Continuous  
I
C
1000  
mAdc  
Total Device Dissipation @ T = 25°C  
P
D
1.0  
8.0  
mW  
mW/°C  
A
Derate above 25°C  
TO92 1 WATT  
(TO226)  
CASE 2910  
STYLE 1  
Total Device Dissipation @ T = 25°C  
P
2.5  
20  
W
C
D
1
2
3
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Derate above 25°C  
mW/°C  
1
2
3
Operating and Storage Junction  
Temperature Range  
T , T  
J
55 to +150  
°C  
stg  
STRAIGHT LEAD  
BULK PACK  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, JunctiontoAmbient  
Thermal Resistance, JunctiontoCase  
R
q
JA  
R
q
JC  
MARKING DIAGRAM  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MPS  
W51x  
AYWWG  
G
x
A
Y
= 51A Devices  
= Assembly Location  
= Year  
WW = Work Week  
G
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
August, 2010 Rev. 4  
MPSW51/D  

MPSW51AG 替代型号

型号 品牌 替代类型 描述 数据表
MPSW51ARLRPG ONSEMI

完全替代

One Watt High Current Transistors
MPSW51ARLRAG ONSEMI

类似代替

1.0 W High Current PNP Bipolar Transistor
MPSW51A ONSEMI

类似代替

One Watt High Current Transistors(PNP Silicon)

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