MPSW51RLRA

更新时间： 2024-09-18 13:11:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	127K
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数据手册

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MPSW51RLRA 数据手册

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by MPSW51/D

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

*Motorola Preferred Device

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage MPSW51

MPSW51A

CEO

CBO

EBO

–30

–40

Vdc

Collector–Base Voltage

MPSW51

–40

–50

Vdc

CASE 29–05, STYLE 1

TO–92 (TO–226AE)

MPSW51A

Emitter–Base Voltage

–5.0

Vdc

Collector Current — Continuous

–1000

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

Watts

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

2.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

125

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

(I = –1.0 mAdc, I = 0)

Vdc

(BR)CEO

MPSW51

MPSW51A

–30

–40

—

Collector–Base Breakdown Voltage

(I = –100 Adc, I = 0)

Vdc

(BR)CBO

MPSW51

MPSW51A

–40

–50

—

Emitter–Base Breakdown Voltage

(I = –100 Adc, I = 0)

–5.0

—

Vdc

(BR)EBO

Collector Cutoff Current

µAdc

CBO

= –30 Vdc, I = 0)

MPSW51

MPSW51A

—

–0.1

= –40 Vdc, I = 0)

Emitter Cutoff Current

(V = –3.0 Vdc, I = 0)

—

–0.1

µAdc

EBO

1. Pulse Test: Pulse Width

300 s, Duty Cycle

2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4

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