5秒后页面跳转
MPSW06RLRP PDF预览

MPSW06RLRP

更新时间: 2024-09-17 13:00:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
4页 92K
描述
500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AE, 3 PIN

MPSW06RLRP 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.77最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

MPSW06RLRP 数据手册

 浏览型号MPSW06RLRP的Datasheet PDF文件第2页浏览型号MPSW06RLRP的Datasheet PDF文件第3页浏览型号MPSW06RLRP的Datasheet PDF文件第4页 
MPSW05, MPSW06  
One Watt Amplifier  
Transistors  
NPN Silicon  
http://onsemi.com  
Features  
PbFree Packages are Available*  
COLLECTOR  
3
2
MAXIMUM RATINGS  
BASE  
Rating  
Symbol  
Value  
Unit  
1
EMITTER  
CollectorEmitter Voltage  
MPSW05  
MPSW06  
V
CEO  
V
CBO  
V
EBO  
60  
80  
Vdc  
CollectorBase Voltage  
MPSW05  
MPSW06  
60  
80  
Vdc  
EmitterBase Voltage  
4.0  
Vdc  
Collector Current Continuous  
I
500  
mAdc  
TO92 1 WATT  
(TO226)  
CASE 2910  
STYLE 1  
C
Total Device Dissipation @ T = 25°C  
P
1.0  
8.0  
W
mW/°C  
A
D
1
1
Derate above 25°C  
2
2
3
3
BENT LEAD  
Total Device Dissipation @ T = 25°C  
P
2.5  
20  
W
mW/°C  
C
D
STRAIGHT LEAD  
BULK PACK  
Derate above 25°C  
TAPE & REEL  
AMMO PACK  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Characteristic  
MPS  
W0x  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
AYWWG  
Thermal Resistance, JunctiontoAmbient  
Thermal Resistance, JunctiontoCase  
R
q
JA  
G
R
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
x
A
Y
= 5 or 6  
= Assembly Location  
= Year  
WW = Work Week  
G
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MPSW05G  
TO92  
5000 Units/Bulk  
5000 Units/Bulk  
(PbFree)  
MPSW06G  
TO92  
(PbFree)  
MPSW06RLRA  
TO92  
2000/Tape & Reel  
2000/Tape & Reel  
MPSW06RLRAG  
TO92  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
August, 2010 Rev. 4  
MPSW05/D  

与MPSW06RLRP相关器件

型号 品牌 获取价格 描述 数据表
MPSW06ZL1 ONSEMI

获取价格

TRANSISTOR 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AE, 3 PIN, BIP Gen
MPSW06ZL1 MOTOROLA

获取价格

500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW10 MOTOROLA

获取价格

One Watt High Voltage Transistor
MPSW10 NSC

获取价格

TRANSISTOR,BJT,NPN,300V V(BR)CEO,500MA I(C),TO-226AE
MPSW10RL MOTOROLA

获取价格

500mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW10RL1 MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPSW10RLRA MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPSW10RLRB MOTOROLA

获取价格

500mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW10RLRE MOTOROLA

获取价格

500mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW10RLRF MOTOROLA

获取价格

暂无描述