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MPSW01ARLRB PDF预览

MPSW01ARLRB

更新时间: 2024-09-17 13:11:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
4页 93K
描述
1000mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

MPSW01ARLRB 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.64
Is Samacsys:N最大集电极电流 (IC):1 A
基于收集器的最大容量:20 pF集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN功耗环境最大值:2.5 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
VCEsat-Max:0.5 VBase Number Matches:1

MPSW01ARLRB 数据手册

 浏览型号MPSW01ARLRB的Datasheet PDF文件第2页浏览型号MPSW01ARLRB的Datasheet PDF文件第3页浏览型号MPSW01ARLRB的Datasheet PDF文件第4页 
Order this document  
by MPSW01/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
3
*Motorola Preferred Device  
2
BASE  
1
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
1
2
3
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
MPSW01  
MPSW01A  
30  
40  
CASE 29–05, STYLE 1  
TO–92 (TO–226AE)  
CollectorBase Voltage  
EmitterBase Voltage  
Vdc  
MPSW01  
MPSW01A  
40  
50  
5.0  
Vdc  
Collector Current — Continuous  
I
C
1000  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
2.5  
20  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = 10 mAdc, I = 0)  
V
Vdc  
(BR)CEO  
MPSW01  
MPSW01A  
30  
40  
C
B
CollectorBase Breakdown Voltage  
(I = 100 µAdc, I = 0)  
V
Vdc  
(BR)CBO  
MPSW01  
MPSW01A  
40  
50  
C
E
EmitterBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
5.0  
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
I
µAdc  
CBO  
(V  
CB  
(V  
CB  
= 30 Vdc, I = 0)  
MPSW01  
MPSW01A  
0.1  
0.1  
E
= 40 Vdc, I = 0)  
E
Emitter Cutoff Current  
(V = 3.0 Vdc, I = 0)  
I
0.1  
µAdc  
EBO  
EB  
C
1. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1997  

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