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MPSW01ARLRPG PDF预览

MPSW01ARLRPG

更新时间: 2024-11-09 05:50:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
4页 129K
描述
One Watt High Current Transistors NPN Silicon

MPSW01ARLRPG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75Factory Lead Time:1 week
风险等级:5.26最大集电极电流 (IC):1 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-226
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MPSW01ARLRPG 数据手册

 浏览型号MPSW01ARLRPG的Datasheet PDF文件第2页浏览型号MPSW01ARLRPG的Datasheet PDF文件第3页浏览型号MPSW01ARLRPG的Datasheet PDF文件第4页 
MPSW01, MPSW01A  
One Watt High Current  
Transistors  
NPN Silicon  
Features  
http://onsemi.com  
PbFree Packages are Available*  
COLLECTOR  
3
2
MAXIMUM RATINGS  
BASE  
Rating  
Symbol  
Value  
Unit  
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
1
MPSW01  
30  
40  
EMITTER  
MPSW01A  
CollectorBase Voltage  
Vdc  
MPSW01  
MPSW01A  
40  
50  
EmitterBase Voltage  
5.0  
Vdc  
Collector Current Continuous  
I
C
1000  
mAdc  
Total Device Dissipation @ T = 25°C  
P
D
1.0  
8.0  
W
mW/°C  
A
Derate above 25°C  
Total Device Dissipation @ T = 25°C  
P
D
2.5  
20  
W
mW/°C  
C
Derate above 25°C  
TO92 (TO226AE)  
CASE 2910  
STYLE 1  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, JunctiontoAmbient  
Thermal Resistance, JunctiontoCase  
R
MARKING DIAGRAM  
q
JA  
R
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MPS  
W01x  
AYWWG  
G
x
A
Y
= 01A Devices  
= Assembly Location  
= Year  
WW = Work Week  
G
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
February, 2010 Rev. 5  
MPSW01/D  

MPSW01ARLRPG 替代型号

型号 品牌 替代类型 描述 数据表
MPSW01AG ONSEMI

完全替代

One Watt High Current Transistors NPN Silicon
MPSW01ARLRAG ONSEMI

类似代替

One Watt High Current Transistors NPN Silicon
MPSW01A ONSEMI

类似代替

One Watt High Current Transistors(NPN Silicon)

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