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MPSL01D27Z PDF预览

MPSL01D27Z

更新时间: 2024-11-23 14:53:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
7页 293K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

MPSL01D27Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.13最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHzBase Number Matches:1

MPSL01D27Z 数据手册

 浏览型号MPSL01D27Z的Datasheet PDF文件第2页浏览型号MPSL01D27Z的Datasheet PDF文件第3页浏览型号MPSL01D27Z的Datasheet PDF文件第4页浏览型号MPSL01D27Z的Datasheet PDF文件第5页浏览型号MPSL01D27Z的Datasheet PDF文件第6页浏览型号MPSL01D27Z的Datasheet PDF文件第7页 
Discr ete P OWER & Sign a l  
Tech n ologies  
MPSL01  
TO-92  
C
B
E
NPN General Purpose Amplifier  
This device is designed for general purpose, high voltage  
amplifiers and gas discharge display driving. Sourced from  
Process 16. See 2N5551 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
120  
140  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
200  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSL01  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
mW  
mW/ C  
°
°
Rθ  
Thermal Resistance, Junction to Case  
83.3  
°C/W  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
200  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

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