Datasheet > MPSL51

MPSL51

更新时间： 2024-11-25 22:51:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体放大器晶体管
页数	文件大小	规格书
2页	26K
描述
PNP General Purpose Amplifier

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中文翻译

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数据手册

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MPSL51 数据手册

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Tech n ologies

MPSL51

TO-92

PNP General Purpose Amplifier

This device is designed for use as general purpose amplifiers

and switches requiring high voltages. Sourced from Process

74. See 2N5401 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

100

Collector-Base Voltage

Emitter-Base Voltage

4.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

200

°C

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSL51

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

mW/ C

R_θ

Thermal Resistance, Junction to Case

83.3

°C/W

R_θ

Thermal Resistance, Junction to Ambient

200

°C/W

1997 Fairchild Semiconductor Corporation

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