Datasheet > MPSL01L34Z

MPSL01L34Z

更新时间： 2024-11-27 04:06:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	293K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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MPSL01L34Z 数据手册

Discr ete P OWER & Sign a l

Tech n ologies

MPSL01

TO-92

NPN General Purpose Amplifier

This device is designed for general purpose, high voltage

amplifiers and gas discharge display driving. Sourced from

Process 16. See 2N5551 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

120

140

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

200

°C

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSL01

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

mW/ C

R_θ

Thermal Resistance, Junction to Case

83.3

°C/W

R_θ

Thermal Resistance, Junction to Ambient

200

°C/W

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7

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MPSL01TRC	CENTRAL	获取价格	Small Signal Bipolar Transistor, 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
MPSL01TRE	CENTRAL	获取价格	暂无描述
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MPSL01TRF	CENTRAL	获取价格	Small Signal Bipolar Transistor, 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
MPSL01TRG	CENTRAL	获取价格	Small Signal Bipolar Transistor, 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,