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MPSL01RLRB PDF预览

MPSL01RLRB

更新时间: 2024-11-26 13:11:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体放大器晶体管
页数 文件大小 规格书
6页 202K
描述
150mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

MPSL01RLRB 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.65
Is Samacsys:N最大集电极电流 (IC):0.15 A
基于收集器的最大容量:8 pF集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN功耗环境最大值:1.5 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHzVCEsat-Max:0.3 V
Base Number Matches:1

MPSL01RLRB 数据手册

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Order this document  
by MPSL01/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
2
3
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
120  
140  
5.0  
Unit  
Vdc  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
Vdc  
Vdc  
Collector Current — Continuous  
I
C
150  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
V
V
120  
140  
5.0  
Vdc  
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
C
B
CollectorBase Breakdown Voltage  
(I = 100 µAdc, I = 0 )  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 10 µAdc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = 75 Vdc, I = 0)  
I
1.0  
100  
µAdc  
nAdc  
CBO  
CB  
Emitter Cutoff Current  
(V = 4.0 Vdc, I = 0)  
E
I
EBO  
EB  
C
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.  
Motorola, Inc. 1996  

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