Datasheet > MPSIG001

MPSIG001

更新时间： 2024-11-23 04:14:47

品牌	Logo	应用领域
MPLUSE		晶体晶体管微波
页数	文件大小	规格书
4页	252K
描述
Low OperatingVoltage, High fT SiGe Microwave Transistors

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MPSIG001 数据手册

M-Pulse Microwave

Low OperatingVoltage, High f_T

SiGe Microwave Transistors

MPSIG001

Features

• Designed for Battery Operation

• f_Tto 14 GHz

Case Styles 535

• Low Voltage Oscillator and Amplifier

• Low Phase Noise and Noise Figure

• Hermetic Packaging and Die Available

• Can be Screened to JANTX, JANTXV Equivalent Levels

Description

The MPSIG001 family of low voltage, high gain band-

width silicon SiGe transistors provides low noise figure

and high gain at low bias voltages. These transistors

are especially attractive for low operating voltage low

noise amplifiers or driver amplifiers at frequencies to 5

GHz. They are also useful for low phase noise local

oscillators and VCOs in battery operated equipment to

14 GHz.

The MPSIG001 family was designed to have low noise

figure at operating voltages as low as 2 volts. These

transistors also exhibit low phase noise in VCOs

operating at 2.5 volts or less.

Micro-X

Because this transistor family was specifically designed

to operate from low bias voltage, it has superior phase

noise.

The MPSIG001 series transistors are available in

hermetic Micro-X packages and in chip form

(MPSIG00100). Other stripline and hermetic packages

are available. The chip and hermetic packages can be

screened to JANTX, JANTXV equivalent levels

Specification Subject to Change Without Notice

M-Pulse Microwave____________________________________________________________________________________

576 Charcot Avemue, San Jose, California 95131

Tel (408) 432-1480

Fax (408)) 432-3440

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