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MPSA76LEADFREE PDF预览

MPSA76LEADFREE

更新时间: 2024-11-12 19:04:03
品牌 Logo 应用领域
CENTRAL 晶体管
页数 文件大小 规格书
3页 661K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

MPSA76LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:TO-92, 3 PIN针数:3
Reach Compliance Code:not_compliantHTS代码:8541.21.00.95
风险等级:5.17最大集电极电流 (IC):0.5 A
配置:DARLINGTON最小直流电流增益 (hFE):10000
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):125 MHz
Base Number Matches:1

MPSA76LEADFREE 数据手册

 浏览型号MPSA76LEADFREE的Datasheet PDF文件第2页浏览型号MPSA76LEADFREE的Datasheet PDF文件第3页 
MPSA75  
MPSA76  
MPSA77  
www.centralsemi.com  
DESCRIPTION:  
SILICON  
The CENTRAL SEMICONDUCTOR MPSA75 series  
devices are silicon PNP Darlington transistors,  
manufactured by the epitaxial planar process, designed  
for applications requiring extremely high gain.  
PNP DARLINGTON TRANSISTORS  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL MPSA75 MPSA76 MPSA77  
UNITS  
V
A
V
40  
50  
60  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
40  
50  
60  
V
V
CES  
EBO  
V
10  
Continuous Collector Current  
Power Dissipation  
I
500  
mA  
mW  
°C  
C
P
625  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
200  
J
stg  
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
MPSA75  
MIN MAX  
MPSA76  
MIN MAX  
MPSA77  
MIN MAX  
A
SYMBOL  
TEST CONDITIONS  
UNITS  
I
I
I
I
I
I
I
V
V
V
V
V
V
V
=30V  
=40V  
=50V  
=30V  
=40V  
=50V  
=10V  
-
100  
-
-
-
-
nA  
CBO  
CBO  
CBO  
CES  
CES  
CES  
EBO  
CB  
CB  
CB  
CE  
CB  
CB  
EB  
-
-
-
100  
-
-
nA  
nA  
nA  
nA  
nA  
nA  
V
-
-
-
-
-
100  
-
-
500  
-
-
-
-
-
-
-
500  
-
-
-
-
-
-
500  
-
100  
-
100  
-
100  
BV  
I =100μA  
40  
40  
-
-
50  
50  
-
-
60  
60  
-
-
CBO  
CES  
C
BV  
I =100μA  
-
1.5  
2.0  
-
-
1.5  
2.0  
-
-
1.5  
2.0  
-
V
C
V
V
I =100mA, I =0.1mA  
V
CE(SAT)  
BE(ON)  
FE  
C
B
V
=5.0V, I =100mA  
-
-
-
V
CE  
CE  
CE  
CE  
B
h
h
V
V
V
=5.0V, I =10mA  
10K  
10K  
125  
10K  
10K  
125  
10K  
10K  
125  
C
=5.0V, I =100mA  
-
-
-
FE  
C
f
=5.0V, I =10mA  
-
-
-
MHz  
T
C
R1 (18-March 2014)  

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