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MPSA43 PDF预览

MPSA43

更新时间: 2024-11-02 22:51:11
品牌 Logo 应用领域
KEC 晶体晶体管开关高压局域网电话
页数 文件大小 规格书
2页 76K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE, TELEPHONE )

MPSA43 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:TO-92, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.63
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:200 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

MPSA43 数据手册

 浏览型号MPSA43的Datasheet PDF文件第2页 
SEMICONDUCTOR  
MPSA42/43  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
HIGH VOLTAGE APPLICATION.  
TELEPHONE APPLICATION.  
B
C
FEATURES  
Complementary to MPSA92/93.  
DIM MILLIMETERS  
N
A
B
C
D
E
4.70 MAX  
4.80 MAX  
3.70 MAX  
0.45  
1.00  
1.27  
E
K
D
G
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VCBO  
RATING  
300  
UNIT  
V
F
G
H
J
K
L
0.85  
MPSA42  
0.45  
Collector-Base  
_
H
14.00 +0.50  
Voltage  
0.55 MAX  
2.30  
MPSA43  
200  
F
F
M
0.45 MAX  
1.00  
MPSA42  
MPSA43  
300  
Collector-Emitter  
Voltage  
N
VCEO  
V
3
1
2
200  
1. EMITTER  
2. BASE  
3. COLLECTOR  
VEBO  
IC  
Emitter-Base Voltage  
Collector Current  
Emitter Current  
6.0  
V
mA  
mA  
mW  
500  
IE  
-500  
625  
TO-92  
PC  
Collector Power Dissipation  
Junction Temperature  
Tj  
150  
Tstg  
Storage Temperature Range  
-55150  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC SYMBOL  
TEST CONDITION  
MIN.  
TYP. MAX. UNIT  
MPSA42  
MPSA43  
MPSA42  
MPSA43  
MPSA42  
MPSA43  
MPSA42  
MPSA43  
300  
200  
300  
200  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Base  
V(BR)CBO  
V(BR)CEO  
ICBO  
IC=100A, IE=0  
V
V
Breakdown Voltage  
-
Collector-Emitter  
IC=1.0mA, IB=0  
Breakdown Voltage  
-
VCB=200V, IE=0  
VCB=160V, IE=0  
VEB=6V, IC=0  
0.1  
0.1  
0.1  
0.1  
-
Collector Cut-off  
Current  
A  
A  
-
-
Emitter Cut-off  
Current  
IEBO  
VEB=4V, IC=0  
-
IC=1.0mA, VCE=10V  
IC=10mA, VCE=10V  
IC=30mA, VCE=10V  
IC=20mA, IB=2.0mA  
IC=20mA, IB=2.0mA  
40  
40  
40  
-
* hFE  
DC Current Gain  
-
-
* VCE(sat)  
* VBE(sat)  
fT  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Transition Frequency  
0.5  
0.9  
-
V
V
-
VCE=20V, IC=10mA, f=100MHz  
50  
-
MHz  
MPSA42  
MPSA43  
3.0  
4.0  
Collector Output  
Capacitance  
Cob  
VCB=20V, IE=0, f=1MHz  
pF  
-
*Pulse Test : Pulse Width300S, Duty Cycle2.0%  
1999. 11. 30  
Revision No : 3  
1/2  

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