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MPSA43_02

更新时间： 2024-11-03 04:39:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
3页 28K
描述
NPN High Voltage Amplifier

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中文翻译

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MPSA43_02 数据手册

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MPSA43  
NPN High Voltage Amplifier  
•
This device is designed for application as a video output to drive color  
CRT and other high voltage applications.  
Sourced from process 48.  
•
•
See MPSA42 for characteristics.  
TO-92  
1. Emitter 2. Base 3. Collector  
1
Absolute Maximum Ratings * T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Value  
200  
Units  
V
V
V
V
Collector-Emitter Voltage  
CES  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
200  
V
CBO  
EBO  
6.0  
V
I
- Continuous  
200  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ +150  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Breakdown Voltage *  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
I
= 1.0mA, I = 0  
200  
200  
6.0  
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
C
B
= 100µA, I = 0  
E
= 100µA, I = 0  
V
C
I
I
V
V
= 160V, I = 0  
0.1  
0.1  
µA  
µA  
CB  
EB  
E
Emitter Cutoff Current  
= 4.0V, I = 0  
C
EBO  
On Characteristics *  
h
DC Current Gain  
I
I
I
= 1.0mA, V = 10V  
25  
40  
50  
FE  
C
C
C
CE  
= 10mA, V = 10V  
CE  
= 30mA, V = 10V  
200  
0.4  
0.9  
CE  
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
= 20mA, I = 2.0mA  
V
V
CE  
C
C
B
= 20mA, I = 2.0mA  
BE  
B
Small Signal Characteristics *  
f
Current Gain Dandwidth Product  
Collector-Base Capacitance  
I
= 10mA, V = 20V, f = 100MHz  
50  
MHz  
pF  
T
C
CE  
C
V
= 20V, I = 0, f = 1.0MHz  
4.0  
cb  
CB  
E
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%  
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
Derate above 25°C  
625  
5.0  
mW  
mW/°C  
D
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
°C/W  
θJC  
θJA  
©2002 Fairchild Semiconductor Corporation  
Rev. B, November 2002  
123

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