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MPSA43 PDF预览

MPSA43

更新时间: 2024-11-03 04:39:15
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体小信号双极晶体管开关高压
页数 文件大小 规格书
2页 108K
描述
High voltage Si-epitaxial planar transistors

MPSA43 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-W3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.64Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MPSA43 数据手册

 浏览型号MPSA43的Datasheet PDF文件第2页 
MPSA42 / MPSA43  
MPSA42 / MPSA43  
High voltage Si-epitaxial planar transistors  
Hochspannungs-Si-Epitaxial Planar-Transistoren  
NPN  
NPN  
Version 2005-06-17  
Power dissipation  
Verlustleistung  
625 mW  
Plastic case  
Kunststoffgehäuse  
TO-92  
(10D3)  
E B C  
Weight approx.  
Gewicht ca.  
0.18 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
2 x 2.54  
Standard packaging taped in ammo pack  
Standard Lieferform gegurtet in Ammo-Pack  
Dimensions / Maße [mm]  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
MPSA42  
MPSA43  
200 V  
Collector-Emitter-volt. - Kollektor-Emitter-Spannung  
Collector-Base-voltage - Kollektor-Basis-Spannung  
Emitter-Base-voltage - Emitter-Basis-Spannung  
Power dissipation – Verlustleistung  
B open  
E open  
C open  
VCEO  
VCBO  
VEBO  
Ptot  
IC  
300 V  
300 V  
200 V  
6 V  
625 mW 1)  
Collector current – Kollektorstrom (dc)  
Base current – Basisstrom  
500 mA  
IB  
100 mA  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
-65...+150°C  
-65…+150°C  
Tj  
TS  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Min.  
Typ.  
Max.  
Collector-Base cutoff current – Kollektorreststrom  
IE = 0, VCB = 200 V  
IE = 0, VCB = 160 V  
MPSA42  
MPSA43  
ICB0  
ICB0  
100 nA  
100 nA  
Emitter-Base cutoff current – Emitterreststrom  
IB = 0, VEB = 6 V  
IB = 0, VEB = 4 V  
MPSA42  
MPSA43  
IEB0  
IEB0  
100 nA  
100 nA  
Collector saturation voltage – Kollektor-Sättigungsspannung 2)  
MPSA42  
VCEsat  
VCEsat  
500 mV  
400 mV  
IC = 20 mA, IB = 2 mA  
MPSA43  
1
2
Valid, if leads are kept at ambient temperature at a distance of 2 mm from the case  
Gültig, wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden  
Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1

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