Datasheet > MPSA06RLRE

MPSA06RLRE

更新时间： 2024-11-21 04:22:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
36页	383K
描述
500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

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MPSA06RLRE 数据手册

SEMICONDUCTOR TECHNICAL DATA

COLLECTOR

BASE

NPN

PNP

EMITTER

Voltage and current are negative

for PNP transistors

MAXIMUM RATINGS

MPSA05

MPSA06

MPSA55

MPSA56

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

*Motorola Preferred Device

CEO

CBO

EBO

Vdc

4.0

Vdc

Collector Current – Continuous

500

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to +150

°C

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

THERMAL CHARACTERISTICS

Characteristic

Symbol

(1)

Max

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

200

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(2)

Collector–Emitter Breakdown Voltage

Vdc

(BR)CEO

(I = 1.0 mAdc, I = 0)

MPSA05, MPSA55

MPSA06, MPSA56

—

Emitter–Base Breakdown Voltage

(I = 100 µAdc, I = 0)

4.0

—

Vdc

µAdc

(BR)EBO

Collector Cutoff Current

(V = 60 Vdc, I = 0)

—

0.1

CES

Collector Cutoff Current

CBO

= 60 Vdc, I = 0)

MPSA05, MPSA55

MPSA06, MPSA56

—

0.1

= 80 Vdc, I = 0)

1. R

is measured with the device soldered into a typical printed circuit board.

2. Pulse Test: Pulse Width

300 s, Duty Cycle

2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–619

12 3 4 5 6 7...36

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