MPSA06T/R

更新时间： 2024-11-20 12:59:59

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体放大器晶体管
页数	文件大小	规格书
6页	242K
描述
Transistor

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中文翻译

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技术参数
数据手册

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MPSA06T/R 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.65
Is Samacsys：	N	最大集电极电流 (IC)：	0.5 A
配置：	Single	最小直流电流增益 (hFE)：	50
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.625 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

MPSA06T/R 数据手册

Order this document

by MPSA05/D

SEMICONDUCTOR TECHNICAL DATA

COLLECTOR

BASE

NPN

PNP

EMITTER

Voltage and current are negative

for PNP transistors

MAXIMUM RATINGS

MPSA05

MPSA06

MPSA55

MPSA56

Rating

Symbol

Unit

Vdc

*Motorola Preferred Device

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

Vdc

4.0

Vdc

Collector Current – Continuous

500

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

stg

–55 to +150

°C

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

THERMAL CHARACTERISTICS

Characteristic

Symbol

(1)

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(2)

Collector–Emitter Breakdown Voltage

Vdc

(BR)CEO

(I = 1.0 mAdc, I = 0)

MPSA05, MPSA55

MPSA06, MPSA56

—

Emitter–Base Breakdown Voltage

(I = 100 µAdc, I = 0)

4.0

—

Vdc

µAdc

(BR)EBO

Collector Cutoff Current

(V = 60 Vdc, I = 0)

—

0.1

CES

Collector Cutoff Current

CBO

= 60 Vdc, I = 0)

MPSA05, MPSA55

MPSA06, MPSA56

—

0.1

= 80 Vdc, I = 0)

1. R

is measured with the device soldered into a typical printed circuit board.

2. Pulse Test: Pulse Width

300 s, Duty Cycle

2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6

中文翻译

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与MPSA06T/R相关器件

型号	品牌	获取价格	描述	数据表
MPSA06-T/R	NXP	获取价格	500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN
MPSA06-T92-B	UTC	获取价格	Small Signal Bipolar Transistor
MPSA06T93	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
MPS-A06T93	ROHM	获取价格	500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, SC-43, 3 PIN
MPSA06TPE1	TOSHIBA	获取价格	TRANSISTOR 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal
MPSA06TPE2	TOSHIBA	获取价格	TRANSISTOR 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal
MPSA06TPER1	TOSHIBA	获取价格	TRANSISTOR 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal
MPSA06TRA	CENTRAL	获取价格	Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
MPSA06TRC	CENTRAL	获取价格	Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
MPSA06TRE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

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